2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
•
2 097 152 words by 32-Bit organization
(alternative 4 194 304 words by 16-Bit)
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 88 mW standby
TTL – 176 mW standby
•
•
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
8 decoupling capacitors mounted on
substrate
All inputs, outputs and clocks fully TTL
compatible
72 pin double-sided Single in-Line Memory
Module with 25.4 mm (1000 mil) height
Utilizes sixteen 1M
×
4 DRAMs in 300 mil
SOJ packages
1024 refresh cycles / 16 ms
Tin-Lead contact pads (S - version)
Gold contact pads (GS - version)
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Ordering Information
Type
HYM 322160S-60
HYM 322160S-70
HYM 322160GS-60
HYM 322160GS-70
Ordering Code
Q67100-Q2014
Q67100-Q2015
Q67100-Q2016
Q67100-Q2017
Package
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
551
09.94
HYM 322160S/GS-60/-70
2M x 32-Bit
The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by
32-Bit in a 72-pin single-in-line package comprising sixteen HYB514400BJ 1M
×
4 DRAMs in 300
mil wide SOJ-packages mounted together with eight 0.2
µF
ceramic decoupling capacitors on a PC
board.
The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Pin No.
A0-A9
DQ0-DQ31
CAS0 - CAS3
RAS0 - RAS3
WE
Function
Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
V
CC
V
SS
PD
N.C.
Presence Detect Pins
-60
PD0
PD1
PD2
PD3
N.C.
N.C.
N.C.
N.C.
-70
N.C.
N.C.
V
SS
N.C.
Semiconductor Group
552
HYM 322160S/GS-60/-70
2M x 32-Bit
Pin Configuration
(top view)
Semiconductor Group
553
HYM 322160S/GS-60/-70
2M x 32-Bit
Block Diagram
Semiconductor Group
554
HYM 322160S/GS-60/-70
2M x 32-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range......................................................................................... – 55 to 125 ˚C
Soldering temperature ............................................................................................................ 260 ˚C
Soldering time ............................................................................................................................. 10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 6.2 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 ˚C,
V
CC
= 5 V
±
10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Symbol
Limit Values
min.
max.
5.5
0.8
–
0.4
20
20
V
V
V
V
µA
µA
2.4
– 1.0
2.4
–
– 20
– 20
Unit
Test
Condition
V
IH
V
IL
V
OH
V
OL
I
I(L)
I
O(L)
I
CC1
Average
V
CC
supply current
(RAS, CAS, address cycling,
t
RC
=
t
RC
min)
-60 version
-70 version
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
–
–
–
880
800
32
mA
mA
mA
2)
3)
,
I
CC2
Average
V
CC
supply current
I
CC3
during RAS only refresh cycles
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC
min)
-60 version
-70 version
–
–
880
800
mA
mA
2)
Semiconductor Group
555
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