256k
×
16-Bit Dynamic RAM
HYB 514171BJ-50/-60
Advanced Information
•
•
•
•
262 144 words by 16-bit organization
0 to 70
°C
operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
• Standby power dissipation
11 mW standby (TTL)
5.5 mW max. standby (CMOS)
• Output unlatched at cycle end allows
two-dimensional chip selection
• Read, write, read-modify write,
CAS-before-RAS refresh, RAS-only
refresh, hidden-refresh and fast page
mode capability
• 2 CAS / 1 WE control
• All inputs and outputs TTL-compatible
• 512 refresh cycles / 16 ms
• Plastic Packages:
P-SOJ-40-1 400 mil width
• CAS access time:
15ns (-50, -60 version)
• Cycle time:
95 ns (-50 version)
110 ns (-60 version)
• Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
• Single + 5.0 V (± 10 %) supply with a
built-in VBB generator
• Low Power dissipation
max. 1045 mW active (-50 version)
max. 935 mW active (-60 version)
The HYB 514171BJ is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The
HYB 514171BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514171BJ to be packed in a standard plastic 400 mil wide P-SOJ-40-1 package.
This package size provides high system bit densities and is compatible with commonly used
automatic testing and insertion equipment. System oriented features include single + 5 V (± 10 %)
power supply, direct interfacing with high performance logic device families such as Schottky TTL.
Semiconductor Group
1
1998-10-01
HYB 514171BJ-50/-60
256k
×
16 DRAM
Absolute Maximum Ratings
Operating temperature range ....................................................................................... 0 to + 70
°C
Storage temperature range.................................................................................... – 55 to + 150
°C
Input/output voltage ......................................................................................................... – 1 to 6 V
Power supply voltage........................................................................................................ – 1 to 6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°C;
V
SS
= 0 V;
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Input high voltage
Input low voltage
TTL Output high voltage (
I
OUT
= – 5.0 mA)
TTL Output low voltage (
I
OUT
= 4.2 mA)
Symbol
Limit Values
min.
max.
2.4
– 1.0
2.4
–
– 10
– 10
–
–
–
Unit Notes
1
1
1
1
1
V
IH
V
IL
V
OH
V
OL
V
CC
+ 0.5 V
0.8
–
0.4
10
10
190
170
2
V
V
V
µA
µA
mA
mA
Input leakage current, any input
I
I(L)
(0 V <
V
IN
<
V
CC
+ 0.3 V, all other inputs = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
<
V
CC
)
Average
V
CC
supply current
-50 version
-60 version
I
O(L)
I
CC1
I
CC2
1
2, 3, 4
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
IH
)
Average
V
CC
supply current during
RAS-only refresh cycles
-50 version
-60 version
Average
V
CC
supply current during
fast page mode operation
-50 version
-60 version
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
CC
– 0.2 V)
Average
V
CC
supply current during
CAS-before-RAS refresh mode
-50 version
-60 version
2, 4
I
CC3
–
190
170
160
150
–
–
1
mA
2, 3, 4
I
CC4
I
CC5
mA
mA
1
2, 4
I
CC6
190
170
mA
Semiconductor Group
5
1998-10-01
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