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Q67100-Q2180

产品描述3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
文件大小83KB,共14页
制造商SIEMENS
官网地址http://www.infineon.com/
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Q67100-Q2180概述

3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module

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3.3V 2M
×
64-Bit EDO-DRAM Module
3.3V 2M x 72-Bit EDO-DRAM Module
168pin unbuffered DIMM Module
with serial presence detect
HYM64V2005GU-50/-60
HYM72V2005GU-50/-60
168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
for PC main memory applications
1 bank 2M x 64, 2M x 72 organisation
Optimized for byte-write non-parity or ECC applications
Extended Data Out (EDO)
Performance:
-50
tRAC
tCAC
tAA
tRC
tHPC
RAS Access Time
CAS Access Time
Access Time from Address
Cycle Time
EDO Mode Cycle Time
50 ns
13 ns
25 ns
84 ns
20 ns
-60
60 ns
15 ns
30 ns
104 ns
25 ns
Single +3.3 V
±
0.3 V Power Supply
CAS-before-RAS refresh, RAS-only-refresh
Decoupling capacitors mounted on substrate
All inputs, outputs and clocks are fully LV-TTL compatible
Serial presence detects (optional)
Utilizes 2M
×
8 -DRAMs in SOJ packages
2048 refresh cycles / 32 ms with 11 / 10 addressing (Row / Column)
Gold contact pad
Card Size: 133,35mm x 25,40 mm x 5,30 mm
This DRAM product module family is intended to be fully pin and architecture compatible
with the 168pin unbuffered SDRAM DIMM module family
Semiconductor Group
1
2.97

Q67100-Q2180相似产品对比

Q67100-Q2180 Q67100-Q2183 Q67100-Q2182 Q67100-Q2181 HYM64V2005GU-50 HYM64V2005GU-60 HYM72V2005GU-50 HYM72V2005GU-60
描述 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module

 
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