4M
×
36-Bit EDO-DRAM Module
HYM 364035S/GS-60
Advanced Information
•
•
4 194 304 words by 36-Bit organization
Fast access and cycle time
60 ns RAS access time
15 ns CAS access time
104 ns cycle time
Hyper page mode (EDO) capability
25 ns cycle time
Single + 5 V (± 10 %) supply
Low power dissipation
max. 7260 mW active
CMOS – 66 mW standby
TTL – 132 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
12 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height
Utilizes 12 4M x 3 DRAM’s in 300 mil SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (HYM 364035S-60)
Gold contact pads (HYM 364035GS-60)
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Semiconductor Group
1
4.96
HYM 364035S/GS-60
4M
×
36-Bit EDO-Module
The HYM 364035S/GS-60 is a 16 MByte EDO-DRAM module organized as 4 194 304 words by 36-
Bit in a 72-pin single-in-line package comprising twelve HYB 5117305BJ 4M
×
3 DRAMs in 300 mil
wide SOJ-packages mounted together with twelve 0.2
µF
ceramic decoupling capacitors on a PC
board.
The HYB 5117305BJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 364035S-60 dictates the use of early write cycles.
Ordering Information
Type
HYM 364035S-60
HYM 364035GS-60
Ordering Code
Q67100-Q3016
Q67100-Q3017
Package
L-SIM-72-13
L-SIM-72-13
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 60 ns)
Semiconductor Group
2
HYM 364035S/GS-60
4M
×
36-Bit EDO-Module
Pin Configuration
(top view)
Pin Names
A0-A10
DQ0-DQ35
CAS0 - CAS3
RAS0, RAS2
WE
Address Inputs for
HYM 364035S/GS
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
V
CC
V
SS
PD
N.C.
Presence Detect Pins
-60
PD0
PD1
PD2
PD3
V
SS
N.C.
N.C.
N.C.
Semiconductor Group
3
HYM 364035S/GS-60
4M
×
36-Bit EDO-Module
Block Diagram
Semiconductor Group
4
HYM 364035S/GS-60
4M
×
36-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range......................................................................................... – 55 to 125 ˚C
Input/output voltage ........................................................................ – 0.5 V to min (
V
CC
+ 0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 9.24 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 ˚C,
V
CC
= 5 V
±
10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current
(RAS, CAS, address cycling,
t
RC
=
t
RC
min)
-60 ns version
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current
during RAS only refresh cycles
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC
min)
-60 ns version
Symbol
Limit Values
min.
max.
2.4
– 0.5
2.4
–
– 80
– 10
Unit
Test
Condition
1)
1)
1)
1)
1)
V
IH
V
IL
V
OH
V
OL
I
I(L)
I
O(L)
I
CC1
V
CC
+ 0.5 V
0.8
–
0.4
80
10
V
V
V
µA
µA
1)
–
1320
24
mA
mA
2),3),4)
I
CC2
I
CC3
–
–
1320
mA
2),4)
Semiconductor Group
5
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