Low-Jitter Precision CMOS Oscillator for Automotive
Features
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Automotive AEC-Q100 Qualified
Two Rise/Fall Time Options for EMI Reduction
Low RMS Phase Jitter: <1 ps (typ.)
High Stability: ±20 ppm, ±25 ppm, ±50 ppm
Wide Temperature Range:
- Automotive Grade 1: –40°C to +125°C
- Automotive Grade 2: –40°C to +105°C
- Automotive Grade 3: –40°C to +85°C
High Supply Noise Rejection: –50 dBc
Wide Freq. Range: 2.3 MHz to 170 MHz
Small Industry Standard Footprints
- 2.5 mm x 2.0 mm
- 3.2 mm x 2.5 mm
- 5.0 mm x 3.2 mm
Excellent Shock and Vibration Immunity
- Qualified to MIL-STD-883
High Reliability
- 20x Better MTF than Quartz Oscillators
Low Current Consumption
Supply Range of 2.25 to 3.63V
Standby and Output Enable Function
Lead-Free and RoHS Compliant
Automotive Infotainment
Automotive ADAS
Automotive Camera Module
Automotive LIDAR and RADAR
General Description
The DSA1101 and DSA1121 series of high
performance oscillators utilize a proven silicon MEMS
technology to provide excellent jitter and stability over
a wide range of supply voltages and temperatures. By
eliminating the need for quartz or SAW technology,
MEMS oscillators significantly enhance reliability and
accelerate product development, while meeting
stringent clock performance criteria for a variety of
communications, storage, and networking applications.
DSA1101 has a standby feature that allows it to
completely power-down when EN pin is pulled low. For
DSA1121, only the outputs are disabled when EN is
low. Both oscillators are available in industry standard
packages, including the small 2.5 mm x 2.0 mm, and
are “drop-in” replacements for standard 4-pin and 6-pin
CMOS quartz crystal oscillators.
The DSC1105/25 is functionally equivalent to the
DSC1101/21, but it has lower drive strength for EMI
reduction.
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Functional Block Diagram
Applications
Benefits
• Replace High Temperature Crystals and Quartz
Oscillators
2017 Microchip Technology Inc.
DS20005890A-page 1
DSA1101/21/05/25
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage, V
IN
...............................................................................................................................–0.3V to V
DD
+0.3V
Supply Voltage ......................................................................................................................................... –0.3V to + 4.0V
ESD Protection On All Pins ........................................................................................... 4000V HBM, 1500V CDM (max.)
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
DS20005890A-page 2
2017 Microchip Technology Inc.
DSA1101/21/05/25
TABLE 1-1:
Parameter
Supply Voltage (Note
1)
ELECTRICAL CHARACTERISTICS
Symbol
V
DD
Min.
2.25
—
Typ.
—
—
20
21
—
—
—
—
—
—
—
—
—
40
Max.
3.63
0.095
22
35
±20
±25
±50
±5
5
—
0.1 x V
DD
5
5
20
—
ppm
ms
V
V
ns
ms
ns
kΩ
1 year @ 25°C
T = 25°C
—
—
—
DSA1101/05
DSA1121/25
Internally pulled-up
ppm
All temp ranges
mA
Units
V
Conditions
—
DSA1101/05, EN pin low. Output
is disabled and device is in
standby
DSA1121/25, EN pin low, output
is disabled
EN pin high, output is enabled
C
L
= 15 pF, F
O
= 100 MHz
Supply Current
I
DD
—
—
Frequency Stability
(Including frequency
variations due to initial
tolerance, temp. and
power supply voltage)
Aging
Startup Time (Note
2)
Input Logic Levels
Input Logic High
Input Logic Low
Output Disable Time (Note
3)
Output Enable Time
Enable Pull-Up Resistor
(Note
4)
CMOS Output
Output Logic Level High
Output Logic Level Low
Output Transition Rise Time
—
Δf
—
—
Δf
t
SU
V
IH
V
IL
t
DS
t
EN
—
—
—
0.75 x V
DD
—
—
—
—
V
OH
V
OL
t
R
0.9 x V
DD
—
—
—
—
—
—
1.1
4
1.3
4.7
—
—
—
3
0.3
0.38
1.7
—
0.1 x V
DD
2
V
V
ns
I = ±6 mA
DSC1101/21, 20% to 80%,
C
L
= 15 pF
DSC1105/25, 20% to 80%,
C
L
= 15 pF
DSC1101/21, 20% to 80%,
C
L
= 15 pF
DSC1105/25, 20% to 80%,
C
L
= 15 pF
C
L
= 15 pF and –40°C to +85°C
C
L
= 15 pF, –40°C to +105°C
and –40°C to +125°C
—
F
OUT
= 125 MHz
200 kHz to 20 MHz @ 125 MHz
100 kHz to 20 MHz @ 125 MHz
12 kHz to 20 MHz @ 125 MHz
5
2
ns
6
170
170
55
—
—
—
2
ps
RMS
MHz
%
ps
RMS
Output Transition Fall Time
t
F
—
2.3
Frequency
Output Duty Cycle
Period Jitter
Integrated Phase Noise
Note 1:
2:
3:
4:
f
O
SYM
J
PER
J
PH
3.3
45
—
—
—
—
Pin 6 V
DD
should be filtered with 0.1 µF capacitor.
t
SU
is time to 100 ppm of output frequency after V
DD
is applied and outputs are enabled.
Output Waveform and Test Circuit figures define the parameters.
Output is enabled if pad is floated or not connected.
2017 Microchip Technology Inc.
DS20005890A-page 3
DSA1101/21/05/25
TEMPERATURE SPECIFICATIONS (Note
1)
Parameters
Temperature Ranges
Operating Temperature Range (T)
T
A
T
A
T
A
Junction Operating Temperature
Storage Temperature Range
Soldering Temperature Range
Note 1:
T
J
T
A
T
S
–40
–40
–40
—
–40
—
—
—
—
—
—
—
+85
+105
+125
+150
+150
+260
°C
°C
°C
°C
°C
°C
Ordering Option I
Ordering Option L
Ordering Option A
—
—
Soldering, 40s
Symbol
Min.
Typ.
Max.
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.
据外媒报道，德国亥姆霍兹研究中心联合会（Helmholtz Association of German Research Centres，HZB）团队采用非破坏性方法，首次研究了采用稀电解液的实用锂硫软包电池。借助原位中子层析成像技术，他们能够实时可视化充电和放电过程中电解液在多层电极上的分布和润湿情况。 图片来源： HZB 相关研究论文已发表于期刊《先进能源材料（Advanced E...[详细]
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