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74AUP1T58GS,132

产品描述logic gates config 4.6 V 20 mA
产品类别逻辑    逻辑   
文件大小209KB,共20页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
标准
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74AUP1T58GS,132概述

logic gates config 4.6 V 20 mA

74AUP1T58GS,132规格参数

参数名称属性值
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconduc
是否Rohs认证符合
厂商名称NXP(恩智浦)
包装说明1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, XSON-6
制造商包装代码SOT1202
Reach Compliance Codecompli

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74AUP1T58
Low-power configurable gate with voltage-level translator
Rev. 5 — 15 August 2012
Product data sheet
1. General description
The 74AUP1T58 provides low-power, low-voltage configurable logic gate functions. The
output state is determined by eight patterns of 3-bit input. The user can choose the logic
functions AND, OR, NAND, NOR, XOR, inverter and buffer. All inputs can be connected to
V
CC
or GND.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 2.3 V to 3.6 V.
The 74AUP1T58 is designed for logic-level translation applications with input switching
levels that accept 1.8 V low-voltage CMOS signals, while operating from either a single
2.5 V or 3.3 V supply voltage.
The wide supply voltage range ensures normal operation as battery voltage drops from
3.6 V to 2.3 V.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across
the entire V
CC
range.
2. Features and benefits
Wide supply voltage range from 2.3 V to 3.6 V
High noise immunity
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; I
CC
= 1.5
A
(maximum)
Latch-up performance exceeds 100 mA per JESD 78B Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
CC
I
OFF
circuitry provides partial power-down mode operation
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C

74AUP1T58GS,132相似产品对比

74AUP1T58GS,132 74AUP1T58GN,132 74AUP1T58GF,132 74AUP1T58GM,115 74AUP1T58GM,132 74AUP1T58GW,125
描述 logic gates config 4.6 V 20 mA logic gates config 4.6 V 20 mA logic gates 3V 1G lpow conf logic gates 3V 1G lpow conf logic gates 3V 1G lpow conf logic gates 3V 1G lpow conf
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc
是否Rohs认证 符合 符合 符合 符合 符合 符合
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
包装说明 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, XSON-6 0.90 X 1.00 MM, 0.35 MM HEIGHT, SOT-1115, XSON-6 1 X 1 MM, 0.50 MM HEIGHT, PLASTIC, SOT-891, XSON-6 1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT-886, XSON-6 1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT-886, XSON-6 PLASTIC, SOT-363, SC-88, PACKAGE-6
制造商包装代码 SOT1202 SOT1115 SOT891 SOT886 SOT886 SOT363
Reach Compliance Code compli compli compli compli compli compli
零件包装代码 - SON SON SON SON TSSOP
针数 - 6 6 6 6 6
系列 - - AUP/ULP/V AUP/ULP/V AUP/ULP/V AUP/ULP/V
JESD-30 代码 - - S-PDSO-N6 R-PDSO-N6 R-PDSO-N6 R-PDSO-G6
JESD-609代码 - - e3 e3 e3 e3
长度 - - 1 mm 1.45 mm 1.45 mm 2 mm
负载电容(CL) - - 30 pF 30 pF 30 pF 30 pF
逻辑集成电路类型 - - LOGIC CIRCUIT LOGIC CIRCUIT LOGIC CIRCUIT LOGIC CIRCUIT
最大I(ol) - - 0.004 A 0.004 A 0.004 A 0.004 A
湿度敏感等级 - - 1 1 1 1
功能数量 - - 1 1 1 1
端子数量 - - 6 6 6 6
最高工作温度 - - 125 °C 125 °C 125 °C 125 °C
最低工作温度 - - -40 °C -40 °C -40 °C -40 °C
封装主体材料 - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - - VSON VSON VSON TSSOP
封装等效代码 - - SOLCC6,.04,14 SOLCC6,.04,20 SOLCC6,.04,20 TSSOP6,.08
封装形状 - - SQUARE RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - - SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法 - - TAPE AND REEL TAPE AND REEL TAPE AND REEL TAPE AND REEL
峰值回流温度(摄氏度) - - 260 260 260 260
电源 - - 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V
Prop。Delay @ Nom-Su - - 9.4 ns 9.4 ns 9.4 ns 9.4 ns
认证状态 - - Not Qualified Not Qualified Not Qualified Not Qualified
施密特触发器 - - YES YES YES YES
座面最大高度 - - 0.5 mm 0.5 mm 0.5 mm 1.1 mm
最大供电电压 (Vsup) - - 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) - - 2.3 V 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) - - 3 V 3 V 3 V 3 V
表面贴装 - - YES YES YES YES
技术 - - CMOS CMOS CMOS CMOS
温度等级 - - AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子面层 - - Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 - - NO LEAD NO LEAD NO LEAD GULL WING
端子节距 - - 0.35 mm 0.5 mm 0.5 mm 0.65 mm
端子位置 - - DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 - - 30 30 30 30
宽度 - - 1 mm 1 mm 1 mm 1.25 mm

 
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