PSD451F
SURFACE MOUNT SCHOTTKY BARRIER DIODES
SMALL SIGNAL SCHOTTKY DIODES 100m AMPERES 40 VOLTS
SOT-323(SC-70)
.012(0.30)
.016(0.40)
.079(2.00)
.094(2.40)
TOP VIEW
.045(1.15)
.053(1.35)
_
.012(0.30)
.012(0.40)
.004(0.10)
.0098(0.25)
.071(1.80)
.087(2.20)
.026(0.65)
.031(0.80)
.039(1.00)
.017(0.42)
0.00
.004(0.10)
.021(0.53)
.004(0.10)
.0098(0.25)
FEATURES
*Small mold type.
*Low VF
*High reliability.
MAXIMUM RATING
(T
A
=25 C unless otherwise noted)
o
CONSTRUCTION
Silicon epitaxial planer
Characteristic
Reverse Voltage (repetitive peak)
Reverse Voltage (DC)
Average rectified forward current
Forward Current surge peak (60Hz, 1cyc)
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
VRM
VR
IO
IFSM
TJ
Tstg
o
Value
40
40
100
1
125
150
Unit
Volts
mA
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Forward Voltage
IF=100mA
IF=10mA
Capacitance between terminals
(VR=10V, f=1.0MHz)
Reverse currect
(VR=10V)
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Symbol
VF
1
VF
2
CT
IR
Min
-
-
-
-
Typ
-
-
6.0
-
Max
0.55
0.34
-
30
Unit
Volts
PF
µAdc
1
PSD451F
SURFACE MOUNT SCHOTTKY BARRIER DIODES
1
Typ.
pulse measurement
REVERSE CURRENT : I
R
(A)
10m
Typ.
pulse measurement
Ta=125°C
FORWARD CURRENT : I
F
(A)
100m
1m
10m
100µ
75°C
Ta
=
25
°
C
25
°
C
75
1m
°
C
12
5
°
C
10µ
25°C
1µ
100µ
10µ
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1µ
0
5
10
15
20
25
30
35
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
100
100
Io CURRENT (%)
10
80
60
40
20
1
0.1
0
5
10
15
20
25
0
0
25
50
75
100
125
REVERSE VOLTAGE : V
R
(V)
AMBIENT TEMPERATURE : Ta (
°C)
Fig. 3 Capacitance between
terminals characteristics
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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2
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