JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Diodes
MBRD1070CT, 80CT, 90CT, 100CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ T
c
=100℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
49
56
10
120
1.25
80
125
-55~+150
63
70
V
A
A
W
℃/W
℃
℃
70
80
90
100
V
MBRD
1070CT
MBRD
1080CT
MBRD
1090CT
MBRD
10100CT
Unit
TO-252-2L
1. ANODE
2. CATHODE
3. ANODE
www.cj-elec.com
1
B,Mar,2016
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBRD1070CT
Reverse voltage
V
(BR)
MBRD1080CT
MBRD1090CT
MBRD10100CT
MBRD1070CT
Reverse current
I
R
MBRD1080CT
MBRD1090CT
MBRD10100CT
Forward voltage
Typical total capacitance
*Pulse test
V
F(1)
V
F(2)
*
C
tot
MBRD1070CT-10100CT
MBRD1070CT-10100CT
MBRD1070CT-10100CT
V
R
=70V
V
R
=80V
V
R
=90V
V
R
=100V
I
F
=5A
I
F
=10A
V
R
=4V,f=1MHz
150
0.85
0.95
V
pF
0.1
mA
I
R
=0.1mA
Test conditions
Min
70
80
90
100
V
Typ
Max
Unit
www.cj-elec.com
2
B,Mar,2016
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