VERY LOW POWER 1.8V
16K/8K/4K X 16 DUAL-PORT
STATIC RAM
Features
◆
◆
IDT70P265/255/245L
◆
◆
◆
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
One port with dedicated time-muliplexed address/data
(ADM) interface
One port configurable to standard SRAM or time-multi-
plexed address/data interface
High-speed access
– Industrial: 65ns (max.), ADM mode
– Industrial: 40ns (max.), Standard SRAM mode
Low-power operation
IDT70P265/255/245L
Active: 27mW (typ.)
Standby: 3.6
µ
W (typ.)
◆
◆
◆
◆
◆
◆
◆
◆
◆
◆
◆
Power supply isolation functionality to aid system power
management
Separate upper-byte and lower-byte control
Supports 3.0V, 2.5V and 1.8V I/O's
Input Read Register
Output Drive Register
BUSY
and Interrupt Flag
On-chip port arbitration logic
Fully asynchronous operation from either port
Available in 100 Ball 0.5mm-pitch BGA
Industrial temperature range (-40°C to +85°C)
Green parts available, see ordering information
Functional Block Diagram
IRR1 – IRR0
(2)
SFEN
IRR/ODR
ODR4 – ODR0
I/O
15L
– I/O
8L
Data <15..0>
I/O
7L
– I/O
0L
Mux’ed
Address /
Data
I/O Control
Memory Array
16K/8K/4K x 16
AddrL <13..0>
AddrR <13..0>
Mux’ed
Address /
Data
I/O Control
Data <15..0>
I/O
15R
– I/O
8R
I/O
7R
– I/O
0R
ADV
L
UB
L
LB
L
ADV
R
UB
R
LB
R
A
13R
– A
0R
Address
Decode
Address
Decode
MSEL
CS
L
OE
L
WE
L
BUSY
L
INT
L
Control Logic
CS
R
OE
R
WE
R
BUSY
R
INT
R
7145 drw 01
NOTES:
1. A
13
- A
0
for IDT70P265; A
12
- A
0
for IDT70P255; A
11
- A
0
for IDT70P245.
2. IRR0 and IRR1 are not available for IDT70P265.
SEPTEMBER 2011
1
©2011 Integrated Device Technology, Inc.
DSC-7145/3
IDT70P265/255/245L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Description
The IDT70P265/255/245 is a very low power 16K/8K/4K x 16
Dual-Port Static RAM. The IDT70P265/255/245 is designed to be used
as a stand-alone 256/128/64K-bit Dual-Port SRAM.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by
CS
permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology,
these devices typically operate on only 27mW of power.
The IDT70P265/255/245 is packaged in a 100 ball 0.5mm- pitch
Ball Grid Array. The package is a 1mm thick and designed to fit in wireless
handset applications.
Pin Configurations
(2,3)
70P265/255/245BY
BY-100
100-Ball 0.5mm Pitch BGA
Top View
1
A
B
C
D
E
F
G
H
J
K
A
5R
2
A
8R
3
A
11R
4
UB
R
5
V
SS
6
ADV
R
7
I/O
15R
8
I/O
12R
9
I/O
10R
10
V
SS
A
B
C
D
E
F
G
H
J
K
A
3R
A
4R
A
7R
A
9R
CS
R
WE
R
OE
R
V
DDIOR
I/O
9R
I/O
6R
A
0R
A
1R
A
2R
A
6R
LB
R
IRR
1 (1)
I/O
14R
I/O
11R
I/O
7R
V
SS
ODR
4
ODR
2
BUSY
R
INT
R
A
10R
A
12R (3)
I/O
13R
I/O
8R
I/O
5R
I/O
2R
V
SS
DNU
(4)
ODR
3
INT
L
V
SS
V
SS
I/O
4R
V
DDIOR
I/O
1R
V
SS
SFEN
ODR
1
BUSY
L
DNU
(4)
V
DD
V
SS
I/O
3R
I/O
0R
I/O
15L
V
DDIOL
ODR
0
DNU
(4)
DNU
(4)
DNU
(4)
OE
L
I/O
3L
I/O
11L
I/O
12L
I/O
14L
I/O
13L
DNU
(4)
DNU
(4)
DNU
(4)
LB
L
CS
L
I/O
1L
V
DDIOL
MSEL
DNU
(4)
I/O
10L
DNU
(4)
DNU
(4)
DNU
(4)
IRR
0 (2)
V
DD
V
SS
I/O
4L
I/O
6L
I/O
8L
I/O
9L
DNU
(4)
DNU
(4)
DNU
(4)
UB
L
ADV
L
WE
L
I/O
0L
I/O
2L
I/O
5L
I/O
7L
1
2
3
4
5
6
7
8
9
10
7145 drw 02
NOTES:-
1. This pin is A
13R
for IDT70P265.
2. This pin is DNU for IDT70P265.
3. This pin is DNU for IDT70P245.
4. DNU pins are "do not use". No trace or power component can be connected to these pins.
6.42
2
SEPTEMBER 29, 2011
IDT70P265/255/245L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Pin Names
Left Port
CS
L
WE
L
OE
L
CS
R
WE
R
OE
R
A
0R
- A
13R
MSEL
(2)
I/O
0L
- I/O
15L
ADV
L
UB
L
LB
L
INT
L
BUSY
L
I/O
0R
- I/O
15R
ADV
R
UB
R
LB
R
INT
R
BUSY
R
SFEN
IRR
0
- IRR
1
(4)
ODR
0
- ODR
4
VDD
VSS
VDDIO
L
VDDIO
R
DNU
(3)
(1)
Right Port
Description
Chip Select (Input)
Read/Write Enable (Input)
Output Enable (Input)
Address (Input)
Mode Select (Input)
Address/Data (Input/Output)
Address Latch Enable (Input)
Upper Byte Enable (Input)
Lower Byte Enable (Input)
Interrupt Flag (Output)
Busy Flag (Output)
Special Function Enable (Input)
Input Read Register (Inputs)
Output Drive Register (Outputs)
Core Power Supply (Input)
Ground (Input)
Left Port Power Supply (Input)
Right Port Power Supply (Input)
Do Not Use
7145 tbl 01
NOTES:
1. A
13
- A
0
for IDT70P265; A
12
- A
0
for IDT70P255; A
11
- A
0
for IDT70P245.
2. MSEL = 0 for Standard SRAM operation, MSEL = 1 for Address/Data Mux
(ADM) operation.
3. ADV
R
is only used when the right port is in ADM mode.
4. IRR
0
is DNU and IRR
1
is A
13R
for 70P265.
Truth Table I: ADM Interface Read/Write Control
Inputs
ADV
X
X
X
Pulse
Pulse
Pulse
Pulse
Pulse
Pulse
CS
H
X
X
L
L
L
L
L
L
WE
X
X
X
H
H
H
L
L
L
OE
X
H
X
L
L
L
X
X
X
UB
X
X
H
L
H
L
L
H
L
LB
X
X
H
L
L
H
L
L
H
Outputs
I/O
0 -
I/O
15
High-Z
High-Z
High-Z
DATA
OUT
(I/O
0
- I/O
15
)
DATA
OUT
(I/O
0
- I/O
7
)
High-Z (I/O
8
- I/O
15
)
High-Z (I/O
0
- I/O
7
)
DATA
OUT
(I/O
8
- I/O
15
)
DATA
IN
(I/O
0
- I/O
15
)
DATA
IN
(I/O
0
- I/O
7
)
High-Z (I/O
8
- I/O
15
)
High-Z (I/O
0
- I/O
7
)
DATA
IN
(I/O
8
- I/O
15
)
Mode
Deselected/Power Down
Output Disable
Upper and Lower Bytes Deselected
Read Upper and Lower Bytes
Read Lower Byte Only
Read Upper Byte Only
Write Upper and Lower Bytes
Write Lower Byte Only
Write Upper Byte Only
7145 tbl 02a
6.42
3
SEPTEMBER 29, 2011
IDT70P265/255/245L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Truth Table II: Standard SRAM Interface Read/Write Control
Inputs
CS
H
X
X
L
L
L
L
L
L
WE
X
X
X
H
H
H
L
L
L
OE
X
H
X
L
L
L
X
X
X
UB
X
X
H
L
H
L
L
H
L
LB
X
X
H
L
L
H
L
L
H
Outputs
I/O
0 -
I/O
15
High-Z
High-Z
High-Z
DATA
OUT
(I/O
0
- I/O
15
)
DATA
OUT
(I/O
0
- I/O
7
)
High-Z (I/O
8
- I/O
15
)
High-Z (I/O
0
- I/O
7
)
DATA
OUT
(I/O
8
- I/O
15
)
DATA
IN
(I/O
0
- I/O
15
)
DATA
IN
(I/O
0
- I/O
7
)
High-Z (I/O
8
- I/O
15
)
High-Z (I/O
0
- I/O
7
)
DATA
IN
(I/O
8
- I/O
15
)
Mode
Deselected/Power Down
Output Disable
Upper and Lower Bytes Deselected
Read Upper and Lower Bytes
Read Lower Byte Only
Read Upper Byte Only
Write Upper and Lower Bytes
Write Lower Byte Only
Write Upper Byte Only
7145 tbl 02b
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
T
BIAS
(3)
T
STG
T
JN
I
OUT
Rating
Terminal Voltage with
Respect to GND
Temperature Under Bias
Storage Temperature
Junction Temperature
DC Output Current
Commercial
& Industrial
-0.5 to V
DDIOX
+0.5
-55 to +125
-65 to +150
+150
20
Unit
V
o
C
C
C
o
o
mA
7145 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
DDIOX
+ 0.5V for more than 25% of the cycle time or 10ns maximum, and is limited
to < 20mA for the period over V
TERM
= V
DDIOX
+ 0.5V
.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
6.42
4
SEPTEMBER 29, 2011
IDT70P265/255/245L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Capacitance
Symbol
C
IN
C
OUT
(TA = +25°C, f = 1.0MHz)
Parameter
Input Capacitance
Output Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
7145 tbl 05
Maximum Operating Temperature
and Supply Voltage
(1)
Grade
Ambient
Temperature
GND
V
DD
1.8V
+
100mV
2.5V
+
100mV
3.0V
+
300mV
7145 tbl 04
Industrial
-40
O
C to +85
O
C
0V
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
NOTE :
1. This is the parameter T
A
. This is the "instant on" case temperature.
DC Electrical Characteristics Over the Operating and
Temperature and Supply Voltage Range
(V
DD
= 1.8V)
70P265/255/245
Ind'l Only
Symbol
Parameter
Output High Voltage (I
0
H
= -100
µA)
Output High Voltage (I
0
H
= -2 mA)
V
OH
Output High Voltage (I
0
H
= -2 mA)
Output Low Voltage (I
0
L
= 100
µA)
Output Low Voltage (I
0
L
= 2 mA)
V
OL
Output Low Voltage (I
0
L
= 2 mA)
P1 I/O
Voltage
P2 I/O
Voltage
Min.
V
DDIO
- 0.2
2.0
2.1
___
Typ.
___
Max.
___
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
1.8V (any port)
2.5V (any port)
3.0V (any port)
1.8V (any port)
2.5V (any port)
3.0V (any port)
1.8V (any port)
2.5V (any port)
___
___
___
___
___
0.2
0.4
0.4
0.2
0.2
0.2
V
DDIO
+ 0.2
V
DDIO
+ 0.3
V
DDIO
+ 0.2
0.4
0.6
0.7
1
1
1
1
1
1
1
1
1
___
___
___
___
___
___
___
___
V
OL
ODR
ODR Output Low Voltage (I
0
L
= 8 mA)
3.0V (any port)
1.8V (any port)
2.5V (any port)
___
___
1.2
1.7
2.0
-0.2
-0.3
-0.2
-1
-1
-1
-1
-1
-1
-1
-1
-1
___
___
V
IH
Input High Voltage
3.0V (any port)
1.8V (any port)
2.5V (any port)
___
___
___
V
IL
Input Low Voltage
3.0V (any port)
1.8V
2.5V
1.8V
2.5V
3.0V
1.8V
2.5V
3.0V
1.8V
2.5V
3.0V
___
___
___
I
OZ
Output Leakage Current
3.0V
1.8V
2.5V
___
µA
___
___
I
CEX
ODR
ODR Output Leakage Current
V
OUT
= V
DDIO
3.0V
1.8V
2.5V
___
µA
___
___
I
IX
Input Leakage Current
3.0V
___
µA
7145 tbl 06
6.42
5
SEPTEMBER 29, 2011
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
