A Product Line of
Diodes Incorporated
PAM8303D
ULTRA LOW EMI, 3W FILTERLESS
MONO CLASS-D AUDIO POWER AMPLIFIER
Description
The PAM8303D is a 3W mono filterless Class-D amplifier with high
PSRR and differential input that eliminate noise and RF rectification.
Features like 90% efficiency and small PCB area make the
PAM8303D Class-D amplifier ideal for cellular handsets. The filterless
architecture requires no external output filter, fewer external
components, less PCB area and lower system costs, and simplifies
application design.
The PAM8303D features short circuit protection and thermal
shutdown.
The PAM8303D is available in MSOP-8 and DFN3x3 8-pin packages.
Pin Assignments
Features
•
•
•
•
•
•
•
•
•
•
•
Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz
High Efficiency up to 90% @1W with an 8Ω Speaker
Shutdown Current <1µA
3W@10% THD Output with a 4Ω Load at 5V Supply
Demanding Few External Components
Superior Low Noise without Input
Supply Voltage from 2.8V to 5.5V
Short Circuit Protection
Thermal Shutdown
Available in Space Saving Packages: MSOP-8, DFN3x3-8
Pb-Free Package
Applications
•
•
•
•
•
•
Cellular Phones/Smart Phones
MP4/MP3
GPS
Digital Photo Frame
Electronic Dictionary
Portable Game Machines
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
1 of 16
www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8303D
Typical Applications Circuit
Pin Descriptions
Pin
Name
OUT+
PVDD
VDD
IN-
IN+
SD
GND
OUT-
Pin
Number
1
2
3
4
5
6
7
8
Function
Positive BTL Output
Power Supply
Analog Power Supply
Negative Differential Input
Positive Differential Input
Shutdown Terminal (active low)
Ground
Negative BTL Output
Functional Block Diagram
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
2 of 16
www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8303D
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Supply Voltage
Input Voltage
Maximum Junction Temperature
Storage Temperature
Soldering Temperature
Rating
6.0
-0.3 to V
DD
+0.3
150
-65 to +150
250, 10 sec
Unit
V
°C
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter
Supply Voltage Range
Ambient Temperature Range
Junction Temperature Range
Rating
2.8 to 5.5
-40 to +85
-40 to +125
Unit
V
°C
°C
Thermal Information
Parameter
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Package
MSOP-8
DFN3x3-8
MSOP-8
Symbol
θ
JA
θ
JC
Max
180
47.9
75
Unit
°C/W
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
3 of 16
www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8303D
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = 2V/V, R
L
= L(33µH) + R + L(33µH), unless otherwise specified.)
Symbol
V
DD
Parameter
Supply Voltage
V
DD
= 5.0V
THD+N = 10%, f = 1KHz, R = 4Ω
V
DD
= 3.6V
V
DD
= 3.2V
V
DD
= 5.0V
THD+N = 1%, f = 1KHz, R = 4Ω
P
O
Output Power
THD+N = 10%, f = 1KHz, R = 8Ω
V
DD
= 3.6V
V
DD
= 3.2V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 3.2V
V
DD
= 5.0V
THD+N = 1%, f = 1KHz, R = 8Ω
V
DD
= 5.0V, P
O
= 1W, R = 8Ω
V
DD
= 3.6V, P
O
= 0.1W, R = 8Ω
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 3.2V, P
O
= 0.1W, R = 8Ω
V
DD
= 5.0V, P
O
= 0.5W, R = 4Ω
V
DD
= 3.6V, P
O
= 0.2W, R = 4Ω
V
DD
= 3.2V, P
O
= 0.1W, R = 4Ω
PSRR
Dyn
V
N
CMRR
η
Power Supply Ripple Rejection
Dynamic Range
Output Noise
Common Mode Rejection Ratio
Peak Efficiency
V
DD
= 3.6V, Inputs AC-Grounded
with C
IN
= 1µF
V
DD
= 5V, THD = 1%, R = 8Ω
Inputs AC-Grounded
V
IC
= 100m, V
PP
, f =1kHz
R
L
= 8Ω, THD = 10%
R
L
= 4Ω, THD = 10%
V
DD
= 5.0V
I
Q
I
SD
Quiescent Current
Shutdown Current
V
DD
= 3.6V
V
DD
= 3.0V
V
DD
= 3.0V to 5.0V
CSP Package, High Side PMOS
plus Low Side NMOS,
I = 500mA
MSOP/DFN package,
High Side PMOS plus
Low Side NMOS, I = 500mA
V
DD
= 3V to 5V
V
DD
= 3V to 5V
Input AC-Ground, V
DD
= 5V
V
DD
= 5V
V
DD
= 5V
1.5
0.3
V
SD
= 0.3V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 3.0V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 3.0V
200
R = 8Ω
f = 1kHz
f = 217Hz
f = 1kHz
f = 10kHz
f = 1kHz
No A-Weighting
A-Weighting
40
85
80
85
f = 1kHz
f = 1kHz
V
DD
= 3.6V
V
DD
= 3.2V
Test Conditions
Min
2.8
2.85
1.65
1.20
2.50
1.15
0.85
1.65
0.75
0.55
1.3
0.55
0.40
3.00
1.80
1.35
2.66
1.30
1.0
1.80
0.90
0.70
1.5
0.72
0.55
0.28
0.40
0.55
0.20
0.35
0.5
-63
-62
-52
95
50
30
63
90
86
7.5
4.6
3.6
0.5
280
300
325
365
385
410
150
250
300kΩ/R
I
10
50
300
10
7.0
5.0
2.0
350
375
400
420
450
500
KΩ
KHz
dB
mV
V
V
mA
µA
%
100
60
µV
dB
0.35
0.45
0.60
0.25
0.40
0.55
-55
-55
-40
%
%
W
W
W
W
Typ
Max
5.5
Units
V
dB
R
DS(ON)
Static Drain-to-Source
On-State Resistor
R
IN
f
SW
G
V
V
OS
V
IH
V
IL
Input Resistance
Switching Frequency
Closed Loop Gain
Output Offset Voltage
Enable Input High Voltage
Enable Input Low Voltage
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
4 of 16
www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8303D
Typical Performance Characteristics
(@T
A
= +25°C, V
DD
= 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)
PAM8303D
Document number: DSxxxxx Rev. 1 - 7
5 of 16
www.diodes.com
November 2012
© Diodes Incorporated
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
