电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

T493A475M004BN6220

产品描述Tantalum Capacitor, Polarized, Tantalum (dry/solid), 4V, 20% +Tol, 20% -Tol, 4.7uF, 1206
产品类别无源元件    电容器   
文件大小910KB,共26页
制造商KEMET(基美)
官网地址http://www.kemet.com
标准  
下载文档 详细参数 全文预览

T493A475M004BN6220概述

Tantalum Capacitor, Polarized, Tantalum (dry/solid), 4V, 20% +Tol, 20% -Tol, 4.7uF, 1206

T493A475M004BN6220规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Objectid1326831066
包装说明, 1306
Reach Compliance Codecompliant
Country Of OriginMexico
ECCN代码EAR99
YTEOL6.95
其他特性ESR IS MEASURED AT 100KHZ, MIL-PRF-55365/8
电容4.7 µF
电容器类型TANTALUM CAPACITOR
介电材料TANTALUM (DRY/SOLID)
ESR3500 mΩ
高度1.6 mm
JESD-609代码e3
漏电流0.0005 mA
长度3.2 mm
安装特点SURFACE MOUNT
负容差20%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形式SMT
包装方法TR, EMBOSSED PLASTIC, 7 INCH
极性POLARIZED
正容差20%
额定(直流)电压(URdc)4 V
尺寸代码1206
表面贴装YES
Delta切线0.06
端子面层Matte Tin (Sn) - with Nickel (Ni) barrier
端子形状J BEND
宽度1.6 mm

文档预览

下载PDF文档
Tantalum Surface Mount Capacitors – High Reliability
T493 High Reliability Alternative MnO
2
(CWR11 Style)
Overview
The KEMET T493 Series is designed for the Commercial
Off-The-Shelf (COTS) requirements of military and
aerospace applications. This series is a surface mount
product offering various lead-frame plating options,
Weibull grading options, surge current testing, F-Tech (an
improved anode manufacturing process) and Simulated
Breakdown Voltage (SBDV) screening options to improve
long term reliability. Standard, low, and ultra-low ESR
options are available. All lots of this series are conditioned
with MIL–PRF–55365 Group A testing. This series is also
approved for DLA Drawing 07016 (please see part number
list specific to this drawing).
KEMET’s F-Tech eliminates hidden defects in the dielectric
which continue to grow in the field, causing capacitor
failures. Based on the fundamental understanding of
degradation mechanisms in tantalum and niobium
capacitors, F-Tech incorporates multiple process
methodologies. Some minimize the oxygen and carbon
content in the anodes which become contaminants
and can lead to the crystallization of the anodic oxide
dielectric. This process methodology reduces the
contaminants, improving quality of the dielectric. An
additional technology provides a stronger mechanical
connection point between the tantalum lead wire and
tantalum anode, enhancing robustness and product
reliability. The benefit of F-Tech is illustrated by a 2,000
hour, 85°C, 1.32 X rated voltage accelerated life test.
F-Tech parts see no degradation while standard tantalum's
have 1.5 orders of magnitude degradation in leakage
current. F-Tech is currently available for the T493 Series
(select D and X case capacitance values in 25 V and
higher rated voltage). Please contact KEMET for details on
ordering other part types with these capabilities.
KEMET’s patented Simulated Breakdown Screening (SBDS)
is a nondestructive testing technique that simulates the
breakdown voltage (BDV) of a capacitor without damage to
its dielectric or to the general population of capacitors. This
screening identifies hidden defects in the dielectric, providing
the highest level of dielectric testing. SBDS is based on the
simulation of breakdown voltage (BDV), the ultimate test of
the dielectric in a capacitor.
Low BDV indicates defects in the dielectric, and therefore, a
higher probability of failure in the field. High BDV indicates
a stronger dielectric and high-reliability performance in the
field. This new screening method allows KEMET to identify
the breakdown voltage of each individual capacitor and
provide only the strongest capacitors from each lot.
SBDS is currently available on select part types in the T493
and T497 Series. Please contact KEMET for details on
ordering other part types with these capabilities.
KEMET offers these technologies per the following options:
• F-Tech only
• SBDS only
• Combination of both F-Tech and SBDS for the ultimate
protection
Built Into Tomorrow
© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • 864-963-6300 • www.kemet.com
T2007_T493 • 10/14/2021
1
MXCHIP Open1081——WIFI技术原理
本帖最后由 qq849682862 于 2014-11-4 08:21 编辑 刚在文库下载的北邮继续教育学院关于WIFI技术原理的文档 感觉还不错 在此共享给大家 176722 ...
qq849682862 无线连接
EEWORLD大学堂----Webench Filter Designer
Webench Filter Designer:https://training.eeworld.com.cn/course/601...
hi5 聊聊、笑笑、闹闹
自动物流中A GV 的通讯网络解决方案
本文介绍了工业自动物流中A GV (自动导航小车) 的通讯解决方案。简要介绍了无线数据通讯与工业控制系 统的集成方式, 主要讨论关于A GV 无线通讯模块的组成与实现以及部分软件设计。...
吸铁石上 无线连接
简单电路求解释
当电容容值很小时,理论上这个电路的时间常数很小很小,电路过渡过程很短,为啥仿真结果出现了震荡,而且幅值还那么小? 182046 ...
喜鹊王子 模拟电子
内核起来了,但串口输出停在Freeing init memory: 88K
移植linux2.6.22至pxa270基本成功了 nfs方式能将系统起来。 工具链为arm-none-linux-gnueabi busybox版本1.9.0。 启动参数:boot root=/dev/nfs rw nfsroot=192.168.1.100:/rootfs ip=192.1 ......
6565 嵌入式系统
C8051F全系列例程代码
C8051F例程,包含各个C8051F系列单片机型号,适合初学者快速入门。 546153 https://download.eeworld.com.cn/detail/hustblue/562656 546154 ...
arui1999 下载中心专版

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 992  738  1025  86  1567  20  15  21  2  32 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved