EN29F010
EN29F010
1 Megabit (128K x 8-bit) 5V Flash Memory
FEATURES
•
5.0V operation for read/write/erase
operations
•
Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
•
-
-
-
-
Sector Architecture:
8 uniform sectors of 16Kbytes each
Supports full chip erase
Individual sector erase supported
Sector protection:
Hardware locking of sectors to prevent
program or erase operations within
individual sectors
High performance program/erase speed
Byte program time: 7µs typical
Sector erase time: 300ms typical
Chip erase time: 3s typical
•
JEDEC Standard program and erase
commands
•
JEDEC standard
DATA
polling and toggle
bits feature
•
Single Sector and Chip Erase
•
Sector Unprotect Mode
•
Embedded Erase and Program Algorithms
•
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
•
0.23 µm triple-metal double-poly
triple-well CMOS Flash Technology
•
Low Vcc write inhibit < 3.2V
•
100K endurance cycle
•
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin 8mm x 20mm TSOP (Type 1)
- 32-pin 8mm x 14mm TSOP (Type 1)
•
Commercial and Industrial Temperature
Ranges
•
-
-
-
•
Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
•
Low Power Active Current
- 12mA typical active read current
- 30mA program/erase current
GENERAL DESCRIPTION
The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform
sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F010 features
5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for
WAIT states in high-performance microprocessor systems.
The EN29F010 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (
W E
)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F010
TABLE 3. OPERATING MODES
1M FLASH USER MODE TABLE
USER MODE
STANDBY
READ
OUTPUT DISABLE
READ
MANUFACTURE ID
READ DEVICE ID
VERIFY SECTOR
PROTECTION
SECTOR
PROTECTION
VERIFY SECTOR
UNPROTECTION
SECTOR
UNPROTECTION
WRITE
CE
H
L
L
L
L
L
L
L
L
L
WE
X
H
H
H
H
H
Pulse
L
H
Pulse
L
L
OE
X
L
H
L
L
L
VID
L
VID
H
A9
X
A9
X
VID
VID
VID
VID
VID
VID
A9
A8
X
A8
X
L/H
X
X
X
X
X
A8
A6
X
A6
X
L
L
L
L
H
H
A6
A1
X
A1
X
L
L
H
X
H
H
A1
A0
X
A0
X
L
H
L
X
L
L
A0
Ax/y
X
Ax/y
Ax/y
X
X
X
X
X
X
Ax/y
DQ(0-7)
HI-Z
DQ (0-7)
HI-Z
MANUFACTURE
ID
DEVICE ID
CODE
X
CODE
X
DIN (0-7)
NOTES:
1) L = V
IL
, H = V
IH
, V
ID
= 11.0V
±
0.5V
2) X = Don’t care, either V
IH
or V
IL
3) Ax/y: Ax = Addr(x), Ay = Addr(y)
TABLE 4. DEVICE IDENTIFICTION
1M FLASH MANUFACTURER/DEVICE ID TABLE
A8
READ
MANUFACTURER ID
READ
DEVICE ID
H
X
(1)
A6
L
L
A1
L
L
A0
L
H
(2)
DQ(7-0)
HEX
MANUFACTURER ID
1C
DEVICE ID
20
NOTES:
1) If a Manufacturing ID is read with A8 = L, the chip will output a configuration code 7Fh. A further
Manufacturing ID must be read with A8 = H.
2) X = Don’t care
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
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