VSB1545S-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.30 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Photovoltaic Solar Cell Protection Schottky Rectifier
TMBS
®
DO-201AD
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
OP
max. (AC mode)
T
J
max. (DC forward current)
Package
Diode variations
15 A
45 V
200 A
0.38 V
150 °C
200 °C
DO-201AD
Single die
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1, 2)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t 1 h
V
RRM
I
F(DC) (1)
I
F(DC)
(2)
SYMBOL
VSB1545S
V1545S
45
15
7.0
200
-40 to +150
UNIT
V
A
A
I
FSM
T
OP
T
J (3)
°C
200
Notes
(1)
With heatsink
(2)
Without heatsink, free air
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 11-Sep-13
Document Number: 89487
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSB1545S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5.0 A
I
F
= 7.5 A
Instantaneous forward voltage
I
F
= 15 A
I
F
= 5.0 A
I
F
= 7.5 A
I
F
= 15 A
Reverse current
Typical junction capacitance
V
R
= 45 V
4.0 V, 1 MHz
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
C
J
T
A
= 125 °C
T
A
= 25 °C
V
F (1)
SYMBOL
TYP.
0.42
0.44
0.48
0.30
0.33
0.38
-
13.8
1995
MAX.
-
-
0.59
-
-
0.46
1000
30
-
μA
mA
pF
V
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: 40 ms pulse width
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance
Typical thermal resistance
SYMBOL
R
R
R
JA
JL
JL
(1)
(1)
(2)
VSB1545S
45
9
4
UNIT
°C/W
°C/W
Notes
(1)
Without heatsink, free air; units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length
(2)
Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink
ORDERING INFORMATION
(Example)
PREFERRED P/N
VSB1545S-E3/54
VSB1545S-E3/73
UNIT WEIGHT (g)
1.20
1.20
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8
7
120
Free air, without heatsink
Percentage of Rated Current (%)
100
DC current with heatsink
80
60
40
20
0
Thermal equilibrium
DC Forward Current (A)
6
5
4
3
2
1
0
R
θJA
= 45 °C/W
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
200
T
A
- Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Ambient Temperature (°C)
Fig. 2 - Rated Forward Current vs. Ambient Temperature
Revision: 11-Sep-13
Document Number: 89487
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSB1545S-E3
www.vishay.com
8
D = 0.5 D = 0.8
7
D = 0.3
D = 0.2
D = 0.1
D = 1.0
100
Vishay General Semiconductor
Instantaneous Reverse Current (mA)
T
A
= 150 °C
10
Average Power Loss (W)
6
5
4
3
2
1
0
0
2
4
T
A
= 125 °C
T
A
= 100 °C
T
1
T
A
= 25 °C
D = t
p
/T
t
p
0.1
20
40
60
80
100
6
8
10
12
14
16
18
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
T
A
= 100 °C
1
T
A
= 25 °C
Junction Capacitance (pF)
0.6
1000
0.1
0
0.1
0.2
0.3
0.4
0.5
100
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 11-Sep-13
Document Number: 89487
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000