电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MI3060C-E3/4W

产品描述schottky diodes & rectifiers 60 volt 30 amp dual 160 amp ifsm
产品类别分立半导体    二极管   
文件大小142KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

MI3060C-E3/4W概述

schottky diodes & rectifiers 60 volt 30 amp dual 160 amp ifsm

MI3060C-E3/4W规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码TO-262AA
包装说明R-PSIP-T3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.62 V
JEDEC-95代码TO-262AA
JESD-30 代码R-PSIP-T3
JESD-609代码e3
最大非重复峰值正向电流160 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流15 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压60 V
表面贴装NO
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
M3060C, MF3060C, MI3060C
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
FEATURES
TO-220AB
ITO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
1
M3060C
PIN 1
PIN 3
PIN 2
CASE
3
1
MF3060C
PIN 1
PIN 3
PIN 2
2
3
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, OR-ing, DC/DC
converters or polarity protection application.
TO-262AA
K
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-262AA
1
MI3060C
PIN 1
PIN 3
PIN 2
2
3
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
2 x 15 A
60 V
160 A
0.547 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
total device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
, T
STG
V
AC
M3060C
MF3060C
60
30
15
160
0.5
10 000
- 65 to + 150
1500
MI3060C
UNIT
V
A
A
A
V/μs
°C
V
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink with t = 1 min
Revision: 21-Nov-12
Document Number: 89009
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1307  1376  325  566  2365  20  47  29  55  26 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved