电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SGA-4163

产品描述DC-5000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER
文件大小392KB,共5页
制造商STANFORD
官网地址http://www.stanfordmicro.com
下载文档 全文预览

SGA-4163概述

DC-5000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

文档预览

下载PDF文档
Product Description
Sirenza Microdevices’ SGA-4163 is a high performance SiGe
HBT MMIC Amplifier. A Darlington configuration featuring 1
micron emitters provides high F
T
and excellent thermal
perfomance. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression
of intermodulation products. At 850 Mhz and 45mA , the SGA-
4163 typically provides +29.7 dBm output IP3, 10.5 dB of gain,
and +13 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Gain & Return Loss vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
SGA-4163
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
•
Broadband Operation: DC-5000 MHz
• Cascadable 50 Ohm
• Patented SiGe Technology
16
12
Gain (dB)
8
4
0
0
1
2
3
4
Frequency (GHz)
5
6
0
-10
-20
IRL
GAIN
Return Loss (dB)
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Units
dB
dBm
dBm
M Hz
dB
dB
dB
V
mA
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
2.9
41
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
9.5
Ty p.
10.5
9.7
9.6
13.0
12.1
29.7
25.4
5000
28.0
20.1
5.0
3.2
45
255
3.5
49
Max.
11.5
ORL
-30
T
L
=+25ºC
-40
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
,
j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 110 Ohms
I
D
= 45 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100638 Rev. D

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 547  2244  1640  2144  255  48  25  15  21  19 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved