FEATURES .................................................................................................................................................................. 5
GENERAL DESCRIPTION ......................................................................................................................................... 7
Table 1. Additional Features ....................................................................................................................... 7
DATA PROTECTION.................................................................................................................................................. 10
Table 2. Protected Area Sizes ................................................................................................................... 11
(14) Page Program (PP)................................................................................................................................... 21
(15) 4 x I/O Page Program (4PP) ..................................................................................................................... 22
Program/Erase Flow(1) with read array data ................................................................................................... 23
Program/Erase Flow(2) without read array data .............................................................................................. 24
(16) Continuously program mode (CP mode) .................................................................................................. 25
(17) Deep Power-down (DP) ............................................................................................................................ 26
(18) Release from Deep Power-down (RDP), Read Electronic Signature (RES) ............................................ 26
(19) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4) .......................................... 26
BP and SRWD if WPSEL=0 ............................................................................................................................. 29
The individual block lock mode is effective after setting WPSEL=1 ................................................................. 30
POWER-ON STATE ................................................................................................................................................... 41
ERASE AND PROGRAMMING PERFORMANCE .................................................................................................... 61
DATA RETENTION .................................................................................................................................................... 61
ORDERING INFORMATION ...................................................................................................................................... 62
PART NAME DESCRIPTION ..................................................................................................................................... 63
PACKAGE INFORMATION ........................................................................................................................................ 64
REVISION HISTORY ................................................................................................................................................. 67
P/N: PM1772
4
REV. 2.0, AUG. 02, 2012
MX25L6436E
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO
TM
(SERIAL MULTI I/O) FLASH MEMORY
FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
•
64Mb: 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/
O mode) structure
• 2048 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
• 256 Equal Blocks with 32K bytes each
- Any Block can be erased individually
• 128 Equal Blocks with 64K bytes each
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read (Normal Serial Mode)
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 70MHz with 8 dummy cycles
- 4 I/O: 75MHz with 8 dummy cycles
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously Program mode (automatically increase address under word program mode)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 50s(typ.) /chip
• Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Low standby current: 50uA (max.)
- Deep power down current: 20uA (max.)
• Typical 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- BP0-BP3 block group protect
- Flexible individual block protect when OTP WPSEL=1
- Additional 4K bits secured OTP for unique identifier
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