DMN6140L
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
60V
R
DS(on) max
140m @ V
GS
= 10V
170m @ V
GS
= 4.5V
I
D
T
A
= +25°C
2.3A
2.1A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.0072 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Analog Switch
D
SOT23
D
G
G
S
S
Equivalent Circuit
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMN6140L-7
DMN6140L-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N61
N61 = Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
DMN6140L
Document number: DS35621 Rev. 4 - 2
1 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
t<10s
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
Value
60
20
1.6
1.2
2.0
1.6
2.3
1.8
2.9
2.3
1.5
10
Units
V
V
A
A
A
A
A
A
NEW PRODUCT
Continuous Drain Current (Note 6) V
GS
= 10V
Thermal Characteristics
Total Power Dissipation (Note 5)
(@T
A
= +25°C, unless otherwise specified.)
Symbol
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
0.7
0.4
183
115
1.3
0.8
94
61
39
-55 to +150
Units
W
°C/W
W
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
60
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
92
115
2.2
0.75
315
18
16
0.65
8.6
4.1
1.0
1.7
2.6
3.6
16.3
2.7
16.8
9.0
Max
—
1
±100
3
140
170
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1.8A
V
GS
= 4.5V, I
D
= 1.3A
V
DS
= 15V, I
D
= 1.8A
V
GS
= 0V, I
S
= 0.45A
V
DS
= 40V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 30V, I
D
= 1.8A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
pF
Ω
nC
ns
V
DS
= 30V, V
GS
= 10V,
R
G
= 6.0ΩI
D
= 1.8A
ns
nC
I
F
= 1.8A, di/dt =100A/µs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1in. square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN6140L
Document number: DS35621 Rev. 4 - 2
2 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
10.0
9.0
V
GS
= 10V
8
V
DS
= 5.0V
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
V
GS
= 3.5V
6
4
NEW PRODUCT
V
GS
= 3.0V
2
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
V
GS
= 2.5V
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
0
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.2
0.18
0.16
0.14
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.5
I
D
= 1.8A
0.4
0.12
0.1
0.08
0.06
0.04
0.02
0
1
2
3
4
5
6
7
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
8
V
GS
= 10V
0.3
0.2
0.1
I
D
= 1.3A
0
2
4
5
6
7
8
9
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On Resistance
vs. Gate-Source Voltage
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.4
V
GS
= 4.5V
2.2
2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.36
0.32
0.28
0.24
0.2
0.16
T
A
= 25°C
T
A
= 125°C
T
A
= 85°C
T
A
= 150°C
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
V
GS
= 10V
I
D
=5.0A
V
GS
= 4.5V
I
D
= 2.5A
0.12
0.08
T
A
= -55°C
0.04
0
0
1
2
3
4
5
6
7
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
8
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN6140L
Document number: DS35621 Rev. 4 - 2
3 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.3
3
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2.7
2.4
2.1
1.8
I
D
= 1mA
0.24
0.18
V
GS
= 4.5V
I
D
= 2.5A
V
GS
= 10V
I
D
= 5.0A
1.5
1.2
0.9
0.6
0.3
0
I
D
= 250µA
NEW PRODUCT
0.12
0.06
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125
150
10
9
I
S
, SOURCE CURRENT (A)
1000
8
7
6
5
T
A
= 25°C
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
100
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
C
oss
f=1MHz
C
rss
10
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
100
V
DS
= 30V
I
D
= 1.8A
R
DS(on)
Limited
V
GS
GATE THRESHOLD VOLTAGE (V)
8
I
D
, DRAIN CURRENT (A)
10
P
W
= 10µs
6
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
4
0.1
2
0.01
0
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1*MRP board
P
W
= 100µs
0
2
4
6
8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
10
0.001
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMN6140L
Document number: DS35621 Rev. 4 - 2
4 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
NEW PRODUCT
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 169°C/W
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
GAUGE PLANE
0.25
H
J
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMN6140L
Document number: DS35621 Rev. 4 - 2
5 of 6
www.diodes.com
December 2014
© Diodes Incorporated
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
