MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA13H4047M
BLOCK DIAGRAM
2
3
400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA13H4047M is a 13-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>13W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA13H4047M-E01
RA13H4047M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA13H4047M
MITSUBISHI ELECTRIC
1/9
24 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4047M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=400-470MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
20
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
400
13
TYP
MAX
470
UNIT
MHz
W
%
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
40
-30
3:1
1
dBc
—
mA
—
—
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<20W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=13W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA13H4047M
MITSUBISHI ELECTRIC
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24 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4047M
2
nd
, 3
rd
HARMONICS versus FREQUENCY
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
30
OUTPUT POWER P
out
(W)
INPUT VSWR
ρ
in
(-)
25
20
15
10
5
ρ
in
η
T
P
out
120
HARMONICS (dBc)
100
80
60
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
-20
-30
-40
2
nd
TOTAL EFFICIENCY
η
T
(%)
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
40
20
-50
-60
3
rd
0
0
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
-70
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
DRAIN CURRENT I
DD
(A)
P
out
5
Gp
5
Gp
40
30
4
3
I
DD
40
30
20
4
3
2
I
DD
f=435MHz,
V
DD
=12.5V,
V
GG
=5V
20
10
0
-15 -10 -5
0
5
10 15
INPUT POWER P
in
(dBm)
20
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
2
1
0
10
0
-15
-10
-5
0
5
1
0
20
10
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
P
out
5
Gp
40
30
20
4
3
2
I
DD
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
10
0
-15
-10
-5
0
5
1
0
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
I
DD
f=400MHz,
V
GG
=5V,
P
in
=50mW
P
out
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
6
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
30
25
20
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
f=435MHz,
V
GG
=5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
RA13H4047M
MITSUBISHI ELECTRIC
3/9
DRAIN CURRENT
I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
24 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4047M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
f=470MHz,
V
GG
=5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=400MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER P
out
(W)
30
25
20
15
10
5
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=435MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
I
DD
f=470MHz,
V
DD
=12.5V,
P
in
=50mW
6
DRAIN CURRENT I
DD
(A)
5
P
out
4
3
2
1
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
10
5
0
RA13H4047M
MITSUBISHI ELECTRIC
4/9
24 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4047M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
RA13H4047M
MITSUBISHI ELECTRIC
5/9
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
24 April 2003
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