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BAS16D, BAS16WS
SMALL SIGNAL DIODES
.022 (0.55)
SOD-123
(BAS16D)
FEATURES
♦
Silicon Epitaxial Planar Diode
♦
Fast switching diode.
♦
Also available in case SOT-23
with designation BAS16.
Cathode Mark
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Top View
max. .004 (0.1)
max. .053 (1.35)
max. .006 (0.15)
.067 (1.70)
.055 (1.40)
MECHANICAL DATA
BAS16D
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01 g
Marking Code:
A6
BAS16WS
Case:
SOD-323 Plastic Case
Weight:
approx. 0.004 g
Marking Code:
A6
min. .010 (0.25)
.012 (0.3)
.112 (2.85)
.100 (2.55)
.076 (1.95)
.065 (1.65)
Cathode Mark
SOD-323
(BAS16WS)
Top View
max. .049 (1.25)
max. .004 (0.1)
min. .010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
max. .006 (0.15)
.059 (1.5)
.043 (1.1)
SYMBOL
VALUE
UNIT
Reverse Voltage
Peak Reverse Voltage
Forward Current (continuous)
Non-Repetitive Peak Forward Current
at t = 1µs
at t = 1ms
at t = 1s
Power Dissipation at Tamb = 25 °C
Maxium Junction Temperature
Storage Temperature Range
1)
Valid
V
R
V
RM
I
F
I
FSM
I
FSM
I
FSM
BAS16D
BAS16WS
P
tot
T
j
T
S
75
100
250
2.0
1.0
0.5
350
1)
200
1)
150
– 65 to +150
1)
V
V
mA
A
A
A
mW
mW
°C
°C
provided electrodes are kept at ambient temperture.
10/21/98
BAS16D, BAS16W
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Leakage Current
at V
R
= 25 V, Tj = 150 °C
at V
R
= 75 V
at V
R
= 75 V, Tj = 150 °C
Capacitance
at V
R
= 0; f = 1 MHz
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 10 mA
I
R
= 1 mA, R
L
= 100Ω
Thermal Resistance
Junction to Ambient Air
1)
Valid
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
–
Max.
715
855
1.00
1.25
30
1
50
2
6
Unit
mV
mV
V
V
µA
µA
µA
pF
ns
V
F
V
F
V
F
V
F
I
R
I
R
I
R
C
tot
t
rr
BAS16D
BAS16WS
R
thJA
–
–
375
1)
650
1)
°C/W
°C/W
provided that electrodes are kept at ambient temperature
stm32/stm8
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