JMnic
Product Specification
Silicon PNP Power Transistors
2SB966
DESCRIPTION
・With
TO-3PFa package
・Complement
to type 2SD1289
APPLICATIONS
・For
use in low frequency and
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-5
-8
-12
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB966
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
-120
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A ;I
B
=-0.5A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-5A ;I
B
=-0.5A
-2.0
V
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-50
μA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-50
μA
h
FE -1
DC current gain
I
C
=-1A ; V
CE
=-5V
60
320
h
FE -2
DC current gain
I
C
=-5A ; V
CE
=-5V
20
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
200
pF
f
T
Transition frequency
I
C
=-1A ; V
CE
=-5V
65
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB966
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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