T-1 (3mm) INFRA-RED EMITTING DIODES
L-34F3C
L-34SF4C
L-34SF6C
L-34SF7C
L-34F3BT
L-34SF4BT
L-34SF6BT
L-34SF7BT
Features
!
MECHANICALLY AND SPECTRALLY MATCHED
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
SF4 and SF6 and SF7 Made with Gallium Aluminum
Arsenide Infrared Emitting diodes.
TO THE L-32P3C PHOTOTRANSISTOR.
!
BOTH
WATER CLEAR LENS AND BLUE TRANSPARENT
LENS AVAILABLE HIGH POWER OUTPUT.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0.25(0.01")
unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
SPEC NO: KDA0437
APPROVED: J.LU
REV NO: V.1
CHECKED:
DATE: SEP/21/2001
DRAWN: J.X.FU
PAGE: 1 OF 5
Selection Guide
Par t No .
Dic e
L en s Ty p e
Po (m W/s r )
@20m A
Min .
L-34F3C
L-34F3BT
L-34SF4C
L-34SF4BT
L-34SF6C
L-34SF6BT
L-34SF7C
L-34SF7BT
GaAs
GaAs
GaAlAs
GaAlAs
GaAlAs
GaAlAs
GaAlAs
GaAlAs
WATER CLEAR
BLUE TRANSPARENT
WATER CLEAR
BLUE TRANSPARENT
WATER CLEAR
BLUE TRANSPARENT
WATER CLEAR
BLUE TRANSPARENT
2
2
2
2
7
7
7
7
Ty p .
10
5
10
4
15
15
18
18
Po (m W/s r )
@50m A
Min .
5
8
5
8
10
10
10
10
Ty p .
20
20
20
20
40
40
45
45
V i ew i n g
An g l e
2θ1/2
5 0
°
5 0
°
5 0
°
5 0
°
5 0
°
5 0
°
5 0
°
5 0
°
Note:
1.
θ1/2
is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
Electrical / Optical Characteristics at T
)
=25°C
°
It em
P/N
F3
S F4
S F6
S F7
F3
S F4
S F6
S F7
F3
S F4
S F6
S F7
F3
S F4
S F6
S F7
F3
S F4
S F6
S F7
Sy m b o l
Ty p .
1.2
1.3
1.35
1.4
-
90
90
30
30
940
880
860
850
50
50
50
41
Max .
1.5
1.7
1.6
1.8
10
10
10
10
-
Un it
Co n d it io n
Forward Voltage
V
F
V
IF=20mA
Reverse Current
I
R
uA
VR=5V
Junction Capacitance
C
pF
V=0 f=1MHz
Peak Spectral Wavelength
λ
P
-
nm
IF=20mA
Spectral Bandwidth
∆λ
-
nm
IF=20mA
SPEC NO: KDA0437
APPROVED: J.LU
REV NO: V.1
CHECKED:
DATE: SEP/21/2001
DRAWN: J.X.FU
PAGE: 2 OF 5
Absolute Maximum Ratings at T
)
=25°C
°
It em
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 4mm below package base.
Sy m b o l
Pd
I
F
I
P
V
R
Topr
Tstg
F 3& S F 4
10 0
50
1.2
5
-40~ +85
-40~ +85
SF6& SF7
100
50
1
5
-40~ +85
-40~ +85
Un it s
mW
mA
A
V
°C
°C
L-34F3C, L-34F3BT
SPEC NO: KDA0437
APPROVED: J.LU
REV NO: V.1
CHECKED:
DATE: SEP/21/2001
DRAWN: J.X.FU
PAGE: 3 OF 5
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
