TLP185
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP185
Office Machine
Programmable Controllers
AC Adapter
I/O Interface Board
Unit: mm
The TOSHIBA mini flat coupler TLP185 is a small outline coupler, suitable for
surface mount assembly.
TLP185 consists of a photo transistor optically coupled to a gallium arsenide
infrared emitting diode. Since TLP185 is smaller than DIP package, it’s
suitable for high-density surface mounting applications such as
programmable controllers.
•
•
•
•
•
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50 % (min)
Rank GB: 100% (min)
Isolation voltage: 3750 Vrms (min)
Operation Temperature:-55 to 110
˚C
Safety Standards
UL approved: UL1577, File No. E67349
cUL approved: CSA Component Acceptance Service No. 5A
File No.E67349
•
CQC approved:GB4943.1,GB8898 Japan and Thailand Factory
Weight: 0.08 g (typ.)
TOSHIBA
11-4M1S
仅适用干海拔
2000m
以下地区安全½用
•
Option (V4) type
VDE approved: EN60747-5-5 ,EN60065,EN60950-1
(Note 1)
Pin Configuration (top view)
Under application EN62368-1
Note 1: When a EN60747-5-5 approved type is needed,
Please designate “Option(V4)”
•
Construction mechanical rating
Creepage distance
: 5.0 mm (min)
Clearance
: 5.0 mm (min)
Insulation thickness
: 0.4 mm (min)
Start of commercial production
2011-12
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TLP185
Current Transfer Ratio
Current Transfer Ratio (%) (I
C
/ I
F
)
Type
Classification
(Note1)
I
F
= 5 mA, V
CE
= 5 V, Ta = 25°C
Min
Blank
Rank Y
Rank GR
Rank GB
TLP185
Rank YH
Rank GRL
Rank GRH
Rank BLL
75
100
150
200
150
200
300
400
Y+
G
G+
B
50
50
100
100
Max
400
150
300
400
Blank, YE, GR, GB, Y+, G, G+, B
YE , Y+
GR , G ,G+
GB, GR, G, G+, BL, B,
Marking Of Classification
Note1: Ex Rank GB: TLP185 (GB,E
Note: Application, type name for certification test, please use standard product type name, i, e.
TLP185(GB,E: TLP185
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TLP185
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
90°C)
Pulse forward current
LED
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta >90°C)
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Detector
Collector current
Collector power dissipation
Collector power dissipation derating
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Total package power dissipation
Total package power dissipation derating (Ta
≥
25°C)
Isolation voltage (AC, 60 s, R.H.
≤
60%)
(Note 2)
(Ta
≥
25°C)
(Note 1)
Symbol
I
F
ΔI
F
/°C
I
FP
V
R
P
D
Rating
50
-1.5
1
5
100
-2.9
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260
200
-2.0
3750
Unit
mA
mA/°C
A
V
mW
mW/°C
°C
V
V
mA
mW
mW/°C
°C
°C
°C
°C
mW
mW/°C
Vrms
Δ
P
D
/°C
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/°C
T
j
T
opr
T
stg
T
sol
P
T
ΔP
T
/°C
BV
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width
≤
100
μs,
f = 100 Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Symbol
V
CC
I
F
I
C
Min
―
―
―
Typ.
5
16
1
Max
48
20
10
Unit
V
mA
mA
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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TLP185
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector-emitter breakdown voltage
Detector
Emitter-collector breakdown voltage
Collector dark current
Capacitance (collector to emitter)
Symbol
V
F
I
R
C
T
V
(BR)CEO
V
(BR)ECO
I
CEO
C
CE
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
Min
1.1
—
—
80
7
—
—
—
Typ.
1.25
—
30
—
—
0.01
2
10
Max
1.4
5
—
—
—
0.08
50
—
Unit
V
μA
pF
V
V
μA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
I
F
= 5 mA, V
CE
= 5 V
Rank GB
I
F
= 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
Off-state collector current
I
C(off)
V
F
= 0.7 V, V
CE
= 48 V
Min
50
100
—
30
—
—
—
—
Typ.
—
—
60
—
—
0.2
—
1
Max
400
%
400
—
%
—
0.3
—
0.3
10
μA
V
Unit
Current transfer ratio
I
C
/I
F
Saturated CTR
I
C
/I
F(sat)
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance (input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 60 s
Isolation voltage
BV
S
AC, 1 s, in oil
DC, 60 s, in oil
Min
—
1×10
12
3750
—
—
Typ.
0.8
10
14
—
10000
10000
Max
—
—
—
Vrms
—
—
Vdc
Unit
pF
Ω
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2017-04-27
TLP185
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
Ω
Test Condition
Min
—
—
—
—
—
—
—
Typ.
5
9
9
9
2
30
70
Max
—
—
—
—
—
—
—
μs
μs
Unit
Fig. 1
Switching time test circuit
I
F
I
F
R
L
V
CC
V
CE
t
S
V
CC
4.5V
0.5V
t
t
off
OFF
V
CE
t
t
on
ON
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2017-04-27
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