DSEP 2x 31-04A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Preliminary Data
V
RSM
V
400
V
RRM
V
400
DSEP 2x 31-04A
Type
I
FAV
= 2x 30 A
V
RRM
= 400 V
t
rr
= 30 ns
miniBLOC, SOT-227 B
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Conditions
T
C
= 105°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= tbd A; L = tbd µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
100
30
tbd
tbd
tbd
-40...+150
150
-40...+150
A
A
A
mJ
A
°C
°C
°C
W
V~
Nm/lb.in.
Nm/lb.in.
g
q
q
Features
q
q
q
q
q
q
q
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
£
1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
100
2500
1.1-1.5/9-13
1.1-1.5/9-13
30
q
q
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Applications
q
Symbol
I
R
x
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 30 A;
T
VJ
= 125°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
0.25
1.0
1.15
1.45
1.15
0.1
mA
mA
V
V
K/W
K/W
ns
6.8
A
q
q
q
q
q
V
F
y
R
thJC
R
thCH
t
rr
I
RM
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
q
I
F
= 1 A; -di/dt = 200 A/ms;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/ms
T
VJ
= 100°C
30
q
q
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
ms,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2
008
DSEP 2x 31-04A
70
A
60
I
F
50
40
30
20
10
0
0.0
1600
nC
1200
T
VJ
= 100°C
V
R
= 200V
I
RM
50
A
40
T
VJ
= 100°C
V
R
= 200V
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
Q
r
800
I
F
= 60A
I
F
= 30A
I
F
= 15A
30
20
I
F
= 60A
I
F
= 30A
I
F
= 15A
400
10
0.5
1.0
1.5 V 2.0
V
F
0
100
A/
m
s 1000
-di
F
/dt
0
0
200
400
600 A/
m
s 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
90
ns
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
15
V
V
FR
0.6
2.0
T
VJ
= 100°C
V
R
= 200V
T
VJ
= 100°C
I
F
= 30A
t
fr
µs
t
fr
0.4
1.5
K
f
1.0
t
rr
80
70
I
F
= 60A
I
F
= 30A
I
F
= 15A
10
V
FR
I
RM
5
0.5
60
0.2
Q
r
0.0
0
40
80
120 °C 160
T
VJ
50
0
200
400
600
-di
F
/dt
0
0
200
400
0.0
600 A/
m
s 1000
800
di
F
/dt
800
A/
m
s 1000
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.436
0.482
0.117
0.115
t
i
(s)
0.0055
0.0092
0.0007
0.0418
1
K/W
0.1
Z
thJC
0.01
0.001
0.0001
0.00001
DSEP 2x 31-04A
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
008
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
2-2
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