LITE-ON
SEMICONDUCTOR
TB0640M thru TB3500M
Bi-Directional
VDRM
IPP
-
58 to 320
Volts
-
50
Amperes
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 50A @10/1000us or 250A
@8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
SMB
SMB
A
DIM.
A
B
B
C
C
D
E
MIN.
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
MAX.
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
G
H
E
F
D
F
G
H
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
SYMBOL
VALUE
UNIT
A
A
℃
℃
I
PP
I
TSM
T
J
T
STG
50
25
-40 to +150
-55 to +150
THERMAL RESISTANCE
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
SYMBOL
VALUE
UNIT
℃
/W
℃
/W
%/
℃
Rth
(J-L)
Rth
(J-A)
△
V
BR
/
△
T
J
20
100
0.1
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
PP
(A)
300
250
150
100
75
50
I
PP
, PEAK PULSE CURRENT (%)
100
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
50
Half value
0
tr
tp
TIME
REV. 0, 09-Oct-2001, KSWB06
ELECTRICAL CHARACTERISTICS
@ T
A=
25
℃
unless otherwise specified
TB0640M thru TB3500M
PARAMETER
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ V
DRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ I
T
=1.0A
BREAKOVER
CURRENT
HOLDING
CURRENT
OFF-STATE
CAPACITANCE
SYMBOL
UNITS
V
DRM
Volts
I
DRM
uA
V
BO
Volts
V
T
Volts
I
BO
-
mA
I
BO+
mA
I
H-
mA
I
H+
mA
Co
pF
LIMIT
Max
Max
Max
Max
Min
Max
Min
Max
Typ
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
300
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
50
50
50
50
50
50
50
50
50
50
50
800
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
800
800
800
800
800
800
800
800
800
800
800
140
140
140
90
90
90
90
60
60
60
60
SYMBOL
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
I
BR
Breakover voltage
Breakover current
I
BO
I
H
I
DRM
I
PP
I
V
V
T
V
BR
V
DRM
V
BO
Holding current
On state voltage
Peak pulse current
Off state capacitance
Note: 1
Note: 2
REV. 0, 09-Oct-2001, KSWB06
NOTES: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the T
SPD
Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
RMS
signal; VR=2V
DC
bias.
RATING AND CHARACTERISTICS CURVES
TB0640M thru TB3500M
FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE
vs JUNCTION TEMPERATURE
100
1.20
NORMALIZED BREAKDOWN VOLTAGE
I(
DRM)
, OFF STATE CURRENT (uA)
1.15
10
1.10
V
BR
(T
J
)
V
BR
(T
J
=25
℃
)
1.0
V
DRM
=50V
1.05
0.1
1.0
0.01
0.95
0.001
-25
0
25
50
75
100
125
150
0.90
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE
vs JUNCTION TEMPERATURE
1.10
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
100
NORMALIZED BREAKOVER VOLTAGE
1.05
V
BO
(T
J
)
V
BO
(T
J
=25
℃
)
I
(T)
, ON STATE CURRENT
10
1.0
T
J
= 25
℃
0.95
-50
1
-25
0
25
50
75
100
125
150
175
1
10
T
J
, JUNCTION TEMPERATURE (
℃
)
V (T); ON STATE VOLTAGE
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT
vs JUNCTION TEMPERATURE
1.6
1
FIG. 6 - RELATIVE VARIATION OF JUNCTION
CAPACITANCE vs REVERSE VOLTAGE BIAS
NORMALIZED HOLDING CURRENT
1.4
1.2
1
0.8
IH (T
J
)
0.6
NORMALIZE CAPACITANCE
IH (T
J
=25
℃
)
C
O
(VR)
C
O
(VR = 1V)
Tj =25
℃
f=1MHz
V
RMS
= 1V
0.4
0.2
-50
-25
0
25
50
75
100
125
0.1
1
10
100
T
J
, JUNCTION TEMPERATURE (
℃
)
VR, REVERSE VOLTAGE
REV. 0, 09-Oct-2001, KSWB06
TYPICAL CIRCUIT APPLICATIONS
TB0640M thru TB3500M
FUSE
RING
TSPD 1
TELECOM
EQUIPMENT
E.G. MODEM
TIP
RING
PTC
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TSPD 2
TIP
PTC
RING
PTC
TSPD 2
TSPD 1
TSPD 3
TELECOM
EQUIPMENT
E.G. LINE
CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
REV. 0, 09-Oct-2001, KSWB06
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
