SD-SST210/214
Linear Integrated Systems
N-CHANNEL LATERAL
DMOS SWITCH
Product Summary
Part Number
SD210DE
SD214DE
SST210
SST214
V(BR)DS Min(V)
30
20
30
20
VGS(th) Max (V)
1.5
1.5
1.5
1.5
rDS(on) Max(Ω)
45 @ VGS = 10V
45 @ VGS = 10V
50 @ VGS = 10V
50 @ VGS = 10V
Crss Max (pF)
0.5
0.5
0.5
0.5
tON Max (ns)
2
2
2
2
Features
• Ultra-High Speed Switching—
tON
: 1 ns
• Ultra-Low Reverse Capacitance: 0.2 pF
• Low Guaranteed
rDS
@5 V
• Low Turn-On Threshold Voltage
• N-Channel Enhancement Mode
Benefits
• High-Speed System Performance
• Low Insertion Loss at High Frequencies
• Low Transfer Signal Loss
• Simple Driver Requirement
• Single Supply Operation
Applications
• Fast Analog Switch
• Fast Sample-and-Holds
• Pixel-Rate Switching
• DAC Deglitchers
• High-Speed Driver
Description
The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for ±10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and
±
voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and
Zener protected—SD211DE/SST211 series.
Top View
SD210DE SD214DE
Top View
SST210 SST214
Absolute Maximum Ratings (T
A
= 25
0
C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage .........................................................
±
40 V
Gate-Substrate Voltage .........................................................................
±
30 V
Drain-Source Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 20 V
Source-Drain Voltage
(SD210DE) ....................................... 10 V
(SD214DE) ....................................... 20 V
Drain-Substrate Voltage
(SD210DE) ....................................... 30 V
(SD214DE) ....................................... 25 V
Source-Substrate Voltage
(SD210DE) ....................................... 15 V
(SD214DE) ....................................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16" from case for 10 seconds) ............................. 300
0
C
Storage Temperature .................................................................... -65 to 150
0
C
Operating Junction Temperature ................................................. -55 to 125
0
C
Power Dissipation
a ....................................................................................................................................
300 mW
Notes:
a. Derate 3 mW/
0
C above 25
0
C
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
