JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882
TRANSISTOR（ NPN
）
TO—126
FEATURES
Power dissipation
P
CM
: 1.25
W（Tamb=25℃）
Collector current
I
CM
:
3
A
Collector-base voltage
V
(BR)CBO
: 40
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
DC current gain
h
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
V
CE
=2V, I
C
= 100mA
I
C
=2A, I
B
= 0.2A
I
C
=2A, I
B
= 0.2A
V
CE
=5 V, I =0.1mA
C
Transition frequency
1. EMITTER
2.COLLECTOR
3.BASE
123
unless
Test
otherwise
MIN
specified）
TYP
MAX
UNIT
V
V
V
1
10
1
μA
μA
μA
conditions
Ic=100μA
，I
E
=0
I
C
= 10 mA , I
B
=0
I
E
= 100
μA，I
C
=0
V
CB
=40 V , I
E
=0
V
CE
=30 V , I
B
=0
V
EB
=6V ,
I
C
=0
40
30
6
V
CE
= 2V, I
C
= 1A
60
32
400
0.5
1.5
V
V
f
T
50
MHz
f =
10MHz
CLASSIFICATION OF h
FE
(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
模拟与混合信号
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