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CY7C2563KV18-500BZC: 产品描述72-Mbit QDR-II SRAM 4-Word Burst Architecture; 文件大小466KB，共30页; 制造商Cypress(赛普拉斯)

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CY7C2563KV18-500BZC概述

72-Mbit QDR-II SRAM 4-Word Burst Architecture

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CY7C2561KV18, CY7C2576KV18

CY7C2563KV18, CY7C2565KV18

72-Mbit QDR

II+ SRAM 4-Word Burst Architecture

(2.5 Cycle Read Latency) with ODT

72-Mbit QDR

II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Features

■

Configurations

With Read Cycle Latency of 2.5 cycles

CY7C2561KV18 – 8M x 8

CY7C2576KV18 – 8M x 9

CY7C2563KV18 – 4M x 18

CY7C2565KV18 – 2M x 36

Separate independent read and write data ports

❐

Supports concurrent transactions

550 MHz clock for high bandwidth

4-word burst for reducing address bus frequency

Double Data Rate (DDR) interfaces on both read and write

ports (data transferred at 1100 MHz) at 550 MHz

Available in 2.5 clock cycle latency

Two input clocks (K and K) for precise DDR timing

❐

SRAM uses rising edges only

Echo clocks (CQ and CQ) simplify data capture in high-speed

systems

Data valid pin (QVLD) to indicate valid data on the output

On-Die Termination (ODT) feature

❐

Supported for D

[x:0]

, BWS

[x:0]

, and K/K inputs

Single multiplexed address input bus latches address inputs

for read and write ports

Separate port selects for depth expansion

Synchronous internally self-timed writes

QDR

II+ operates with 2.5 cycle read latency when DOFF is

asserted HIGH

Operates similar to QDR I device with 1 cycle read latency when

DOFF is asserted LOW

Available in x8, x9, x18, and x36 configurations

Full data coherency, providing most current data

Core V

= 1.8V± 0.1V; I/O V

DDQ

= 1.4V to V

DD [1]

❐

Supports both 1.5V and 1.8V I/O supply

HSTL inputs and variable drive HSTL output buffers

Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

Offered in both Pb-free and non Pb-free packages

JTAG 1149.1 compatible test access port

Phase-locked loop (PLL) for accurate data placement

■

Functional Description

The CY7C2561KV18, CY7C2576KV18, CY7C2563KV18, and

CY7C2565KV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR II+ architecture. Similar to QDR II archi-

tecture, QDR II+ architecture consists of two separate ports: the

read port and the write port to access the memory array. The

read port has dedicated data outputs to support read operations

and the write port has dedicated data inputs to support write

operations. QDR II+ architecture has separate data inputs and

data outputs to completely eliminate the need to “turn-around”

the data bus that exists with common I/O devices. Each port is

accessed through a common address bus. Addresses for read

and write addresses are latched on alternate rising edges of the

input (K) clock. Accesses to the QDR II+ read and write ports are

completely independent of one another. To maximize data

throughput, both read and write ports are equipped with DDR

interfaces. Each address location is associated with four 8-bit

words (CY7C2561KV18), 9-bit words (CY7C2576KV18), 18-bit

words (CY7C2563KV18), or 36-bit words (CY7C2565KV18) that

burst sequentially into or out of the device. Because data is trans-

ferred into and out of the device on every rising edge of both input

clocks (K and K), memory bandwidth is maximized while simpli-

fying system design by eliminating bus “turn-arounds”.

These devices have an On-Die Termination feature supported

for D

[x:0]

, BWS

[x:0]

, and K/K inputs, which helps eliminate

external termination resistors, reduce cost, reduce board area,

and simplify board routing.

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■

Table 1. Selection Guide

Description

Maximum Operating Frequency

Maximum Operating Current

550 MHz

550

900

920

1310

500 MHz

500

830

850

1210

450 MHz

450

760

780

1100

400 MHz

400

690

710

1000

Unit

MHz

x18

x36

Note

1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V

DDQ

= 1.4V to V

Cypress Semiconductor Corporation

Document Number: 001-15887 Rev. *K

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised October 12, 2010

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CY7C2563KV18-500BZC概述

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