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CY7C1511JV18-250BZC

产品描述72-Mbit QDR-II SRAM 4-Word Burst Architecture
文件大小903KB,共24页
制造商Cypress(赛普拉斯)
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CY7C1511JV18-250BZC概述

72-Mbit QDR-II SRAM 4-Word Burst Architecture

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CY7C1513JV18
CY7C1515JV18
72-Mbit QDR
®
II SRAM 4-Word
Burst Architecture
Features
Configurations
CY7C1513JV18 – 4M x 18
CY7C1515JV18 – 2M x 36
Separate independent Read and Write Data Ports
Supports concurrent transactions
300 MHz clock for High Bandwidth
4-word Burst for reducing Address Bus Frequency
Double Data Rate (DDR) Interfaces on both Read and Write
Ports (data transferred at 600 MHz) at 300 MHz
Two Input Clocks (K and K) for precise DDR Timing
SRAM uses rising edges only
Two Input Clocks for Output Data (C and C) to minimize Clock
Skew and Flight Time Mismatches
Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
Single multiplexed Address Input Bus latches Address Inputs
for Read and Write Ports
Separate Port Selects for Depth Expansion
Synchronous Internally Self-timed Writes
QDR
®
II operates with 1.5 Cycle Read Latency when the Delay
Lock Loop (DLL) is enabled
Operates similar to a QDR I Device with one Cycle Read
Latency in DLL Off Mode
Available in x18, and x36 Configurations
Full Data Coherency, providing Most Current Data
Core V
DD
= 1.8 (± 0.1V); IO V
DDQ
= 1.4V to V
DD
Available in 165-ball FBGA Package (15 x 17 x 1.4 mm)
Offered in both Pb-free and non Pb-free Packages
Variable Drive HSTL Output Buffers
JTAG 1149.1 compatible Test Access Port
Delay Lock Loop (DLL) for accurate data placement
Functional Description
The CY7C1513JV18, and CY7C1515JV18 are 1.8V
Synchronous Pipelined SRAMs, equipped with QDR II archi-
tecture. QDR II architecture consists of two separate ports: the
read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to “turn-around”
the data bus that exists with common I/O devices. Each port is
accessed through a common address bus. Addresses for read
and write addresses are latched on alternate rising edges of the
input (K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with four 18-bit
words (CY7C1513JV18), or 36-bit words (CY7C1515JV18) that
burst sequentially into or out of the device. Because data is trans-
ferred into and out of the device on every rising edge of both input
clocks (K and K and C and C), memory bandwidth is maximized
while simplifying system design by eliminating bus ‘turnarounds’.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
x18
x36
300 MHz
300
1115
1140
250 MHz
250
865
1040
167 MHz
167
615
725
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-12560 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 24, 2009
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