CY7C1411BV18, CY7C1426BV18
CY7C1413BV18, CY7C1415BV18
36-Mbit QDR™-II SRAM 4-Word
Burst Architecture
Features
■
Configurations
CY7C1411BV18 – 4M x 8
CY7C1426BV18 – 4M x 9
CY7C1413BV18 – 2M x 18
CY7C1415BV18 – 1M x 36
Separate independent read and write data ports
❐
Supports concurrent transactions
300 MHz clock for high bandwidth
4-word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 600 MHz) at 300 MHz
Two input clocks (K and K) for precise DDR timing
❐
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR-II operates with 1.5 cycle read latency when DLL is
enabled
Operates as a QDR-I device with 1 cycle read latency in DLL
off mode
Available in x 8, x 9, x 18, and x 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 (±0.1V); IO V
DDQ
= 1.4V to V
DD
Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
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Functional Description
The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and
CY7C1415BV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports to access the memory array. The
read port has dedicated data outputs to support the read opera-
tions and the write port has dedicated data inputs to support the
write operations. QDR-II architecture has separate data inputs
and data outputs to completely eliminate the need to
“turn-around” the data bus required with common IO devices.
Access to each port is through a common address bus.
Addresses for read and write addresses are latched on alternate
rising edges of the input (K) clock. Accesses to the QDR-II read
and write ports are completely independent of one another. To
maximize data throughput, read and write ports are equipped
with DDR interfaces. Each address location is associated with
four
8-bit
words
(CY7C1411BV18),
9-bit
words
(CY7C1426BV18), 18-bit words (CY7C1413BV18), or 36-bit
words (CY7C1415BV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus “turn-arounds.”
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on chip
synchronous self-timed write circuitry.
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Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
x8
x9
x18
x36
300 MHz
300
930
940
1020
1230
278 MHz
278
865
870
950
1140
250 MHz
250
790
795
865
1040
200 MHz
200
655
660
715
850
167 MHz
167
570
575
615
725
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-07037 Rev. *C
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised September 27, 2007
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