AP9962H/J
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Single Drive Requirement
▼
Surface Mount Package
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
40V
20mΩ
32A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9962J) are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=100℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
40
±20
32
20
150
34.7
0.27
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.5
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
201028031
AP9962H/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
19
-
-
-
13
5
8
8
38
20
5
180
115
Max. Units
-
-
20
30
3
-
1
25
±100
21
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=16A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=20A
V
DS
=40V, V
GS
=0V
V
DS
=32V ,V
GS
=0V
V
GS
= ± 20V
I
D
=20A
V
DS
=32V
V
GS
=4.5V
V
DS
=20V
I
D
=20A
R
G
=3.3Ω,V
GS
=10V
R
D
=1.0Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1170 1870
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=32A, V
GS
=0V
I
S
=20A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
24
14
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
AP9962H/J
140
120
120
T
C
=25 C
o
10V
8.0V
I
D
, Drain Current (A)
T
C
=150
o
C
100
10V
8.0V
100
I
D
, Drain Current (A)
6.0V
80
80
6.0V
60
60
4.5V
40
4.5V
40
20
20
V
G
=3.0V
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
V
G
=3.0V
0
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
36
1.8
I
D
=20A
32
T
C
=25
o
C
Normalized R
DS(ON)
1.6
I
D
=20A
V
G
=10V
28
1.4
R
DS(ON)
(m
Ω
)
24
1.2
20
1.0
16
0.8
12
0.6
3
4
5
6
7
8
9
10
11
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
30
2.2
25
2
20
15
o
T
j
=150 C
10
V
GS(th)
(V)
1.4
1.8
I
S
(A)
T
j
=25 C
o
1.6
1.4
5
1.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9962H/J
f=1.0MHz
14
10000
I
D
=20A
12
V
GS
, Gate to Source Voltage (V)
V
DS
=20V
10
V
DS
=25V
V
DS
=32V
C (pF)
1000
Ciss
8
6
Coss
100
Crss
4
2
0
0
5
10
15
20
25
30
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
100us
1ms
I
D
(A)
10
0.2
0.1
0.1
0.05
10ms
100ms
1s
DC
P
DM
0.02
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
T
C
=25 C
Single Pulse
o
0.01
Single Pulse
0.1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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