AP04N70BP
Advanced Power
Electronics Corp.
▼
Dynamic dv/dt Rating
▼
Repetitive Avalanche Rated
▼
Fast Switching
▼
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600/650/700V
2.4Ω
4A
G
S
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220
type provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.
G
D
S
TO-220
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
- /A/H
Rating
600/650/700
± 30
4
2.5
15
62.5
0.5
100
4
4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
20030332
AP04N70BP
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=0V, I
D
=1mA
V
GS
=0V, I
D
=1mA
ΔBV
DSS
/ΔT
j
Min.
/-
/A
/H
600
650
700
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.6
-
-
2.5
-
-
-
16.7
4.1
4.9
11
8.3
23.8
8.2
950
65
6
Max. Units
-
-
-
-
2.4
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
V
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=10V, I
D
=2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=
±
30V
I
D
=4A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=4A
R
G
=10Ω,V
GS
=10V
R
D
=75Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25
o
C , V
DD
=50V , L=25mH , R
G
=25Ω , I
AS
=4A.
3.Pulse width <300us , duty cycle <2%.
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
T
j
=25℃, I
S
=4A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
4
15
1.5
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
3
Ordering Code
AP04N70BP- X : X Denote BV
DSS
Grade
Blank = BV
DSS
600V
A
H
= BV
DSS
650V
= BV
DSS
700V
AP04N70BP
2.5
2
T
C
=25
o
C
2
V
G
=10V
V
G
=6.0V
V
G
=5.0V
1.5
T
C
=150
o
C
V
G
=10V
V
G
=6.0V
V
G
=5.0V
V
G
=4.5V
I
D
, Drain Current (A)
1.5
V
G
=4.5V
1
I
D
, Drain Current (A)
1
V
G
=4.0V
0.5
0.5
V
G
=4.0V
V
G
=3.5V
0
0
1
2
3
4
5
6
7
0
0
2
4
6
8
10
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.5
I
D
=2A
V
G
=10V
1.1
2
Normalized BV
DSS
(V)
Normalized R
DS(ON)
1.5
1
1
0.9
0.5
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature (
o
C )
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP04N70BP
4.5
80
4
3.5
60
I
D
, Drain Current (A)
3
P
D
(W)
25
50
75
100
125
150
2.5
40
2
1.5
20
1
0.5
0
0
0
50
100
150
T
c
, Case Temperature (
o
C )
T
c ,
Case Temperature (
o
C )
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
10
Normalized Thermal Response (R
thjc
)
DUTY=0.5
0.2
I
D
(A)
10us
100us
1
0.1
0.1
0.05
1ms
10ms
0.1
P
DM
0.02
0.01
SINGLE PULSE
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
100ms
T
c
=25 C
Single Pulse
0.01
1
10
100
1000
10000
o
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP04N70BP
16
10000
f=1.0MHz
I
D
=4A
14
V
GS
, Gate to Source Voltage (V)
12
V
DS
=320V
V
DS
=400V
Ciss
10
V
DS
=480V
C (pF)
100
8
Coss
6
4
Crss
2
0
0
5
10
15
20
25
1
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
T
j
=150
o
C
V
GS(th)
(V)
1.4
1.6
I
S
(A)
T
j
= 25
o
C
3
2
1
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
V
SD
(V)
T
j
, Junction Temperature ( C )
100
o
150
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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