JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A44
FEATURES
TRANSISTOR（ NPN
）
TO—92
1.EMITTER
Power dissipation
P
CM
: 0.625 W
Collector current
I
CM
: 0.2 A
Collector-base voltage
V
(BR)CBO
: 400 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE
（
1
）
DC current gain
H
FE
（
2
）
H
FE
（
3
）
V
CE
(sat)
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter sataration voltage
V
BE
(sat)
I
C
=50 mA, I
B
=5mA
I
C
=10 mA, I
B
= 1 mA
V
CE
=20V,
Transition
frequency
f
T
f =30MHz
I =10mA
C
50
MHz
0.3
0.75
V
V
（Tamb=25℃）
2.BASE
3. COLLECTOR
1 2 3
unless
Test
otherwise
MIN
specified）
TYP
MAX
UNIT
V
V
V
0.1
5
μA
μA
μA
conditions
Ic= 100μA
，
I
E
=0
I
C
= 1
mA ,
I
B
=0
I
C
=0
I
E
=0
400
400
5
I
E
=100μA，
V
CB
=400 V ,
V
CE
=400 V ,
V
EB
= 4
V,
I
C
=0
80
70
60
0.1
300
V
CE
=10V , I
C
=10 mA
V
CE
=10V, I
C
=1mA
V
CE
=10V ,I
C
=100 mA
I
C
=10 mA, I
B
=1mA
0.2
V
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