DATA SHEET
MOS INTEGRATED CIRCUIT
MC-242444
MCP (MULTI-CHIP PACKAGE) FLASH MEMORY AND MOBILE SPECIFIED RAM
32M-BIT FLASH MEMORY AND 16M-BIT CMOS MOBILE SPECIFIED RAM
Description
The MC-242444 is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8
bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 16,777,216 bits (1,048,576 words by 16 bits)
Mobile specified RAM.
The MC-242444 is packaged in a 77-pin TAPE FBGA and 71-pin TAPE FBGA.
Features
General Features
•
Fast access time : t
ACC
= 90 ns (MAX.), 85 ns (MAX.) (V
CC
f
≥
2.7 V) (Flash Memory)
t
AA
= 80, 90, 100 ns (MAX.) (Mobile specified RAM)
•
Supply voltage : V
CC
f / V
CC
m = 2.6 to 3.0 V
•
Wide operating temperature : T
A
=
−20
to +70
°C
Flash Memory Features
•
Two bank organization enabling simultaneous execution of erase / program and read
•
Bank organization : 2 banks (16M bits + 16M bits)
•
Memory organization : 4,194,304 words
×
8 bits (BYTE mode)
2,097,152 words
×
16 bits (WORD mode)
•
Sector organization : 71 sectors (8K bytes / 4K words
×
8 sectors, 64K bytes / 32K words
×
63 sectors)
•
Boot sector allocated to the highest address (sector)
•
3-state output
•
Automatic program
•
Program suspend / resume
•
Unlock bypass program
•
Automatic erase
•
Chip erase
•
Sector erase (sectors can be combined freely)
•
Erase suspend / resume
•
Program / Erase completion detection
•
Detection through data polling and toggle bits
•
Detection through RY (/BY) pin
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15411EJ4V0DS00 (4th edition)
Date Published July 2001 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
2001
MC-242444
•
Sector group protection
•
Any sector can be protected
•
Any protected sector can be temporary unprotected
•
Sectors can be used for boot application
•
Hardware reset and standby using /RESET pin
•
Automatic sleep mode
•
Boot block sector protect by /WP (ACC) pin
•
Conforms to common flash memory interface (CFI)
•
Extra One Time Protect Sector provided
Mobile specified RAM Features
•
Memory organization : 1,048,576 words by 16 bits
•
Supply current : At operating : 35 mA (MAX.)
At Standby Mode 1 : 100
µ
A (MAX.)
At Standby Mode 2 : 10
µ
A (MAX.)
•
Chip Enable inputs : /CEm
•
Byte data control : /LB, /UB
•
Standby Mode input : MODE
•
Standby Mode 1 : Normal standby (Memory cell data hold valid)
•
Standby Mode 2 : Memory cell data hold invalid
Ordering Information
Part number
Flash Memory
Boot sector
Flash Memory
Access time
ns (MAX.)
MC-242444F9-B90-BT3
MC-242444F9-B95-BT3
Note
MC-242444F9-B10-BT3
MC-242444F9-B90-BS1
Note
MC-242444F9-B95-BS1
Note
MC-242444F9-B10-BS1
Note
Highest address (sector)
(T type)
90
85 (V
CC
f
≥
2.7 V)
Mobile specified RAM
Access time
ns (MAX.)
80
90
100
80
90
100
71-pin TAPE FBGA
(11
×
7)
77-pin TAPE FBGA
(12
×
7)
Package
Note
Under development
2
Data Sheet M15411EJ4V0DS
MC-242444
Pin Configurations
/xxx indicates active low signal.
77-pin TAPE FBGA (12
×
7)
Top View
A
8
7
6
5
4
3
2
1
NC
NC
NC
NC
NC
NC
B
NC
NC
C
NC
NC
A11
A8
/WE
D
E
A15
A12
A19
MODE
F
IC
A13
A9
A20
G
IC
A14
A10
H
A16
J
CIOf
K
V
SS
I/O14
I/O5
NC
I/O11
I/O2
I/O8
NC
NC
NC
NC
NC
NC
L
M
NC
NC
N
NC
NC
P
NC
NC I/O15, A-1 I/O7
I/O6
I/O13
I/O4
I/O3
I/O12
V
CC
m
V
CC
f
I/O10
I/O0
/CEm
/WP(ACC) /RESET RY(/BY)
/LB
A7
/UB
A6
A3
A18
A5
A2
A17
A4
A1
I/O1
V
SS
A0
I/O9
/OE
/CEf
71-pin TAPE FBGA (11
×
7)
Top View
A
8
7
6
5
4
3
2
1
NC
NC
NC
NC
NC
B
NC
NC
A11
A8
/WE
C
D
A15
A12
A19
MODE
E
NC
A13
A9
A20
F
IC
A14
A10
G
A16
H
CIOf
J
Vss
I/O14
I/O5
NC
I/O11
I/O2
I/O8
NC
NC
NC
NC
K
L
NC
NC
M
NC
NC
NC I/O15, A-1 I/O7
I/O6
I/O13
I/O4
I/O3
I/O12
V
CC
m
V
CC
f
I/O10
I/O0
/CEm
/WP(ACC)/RESET RY(/BY)
/LB
A7
/UB
A6
A3
A18
A5
A2
A17
A4
A1
I/O1
Vss
A0
I/O9
/OE
/CEf
Common Pins
A0 - A19
: Address inputs
I/O0 - I/O15 : Data inputs / outputs
/OE
: Output Enable
/WE
: Write Enable
: Ground
V
SS
Note 1
NC
: No Connection
Note 2
IC
: Internal Connection
Flash Memory Pins
A20
: Address inputs
I/O15, A−1 : Data inputs / outputs 15 (WORD mode)
LSB address input (BYTE mode)
/CEf
: Chip Enable
RY (/BY)
: Ready (Busy) output
/RESET
: Hardware reset input
: Supply Voltage
V
CC
f
/WP(ACC) : Hardware Write Protect (Acceleration)
CIOf
: Selects 8-bit or 16-bit mode
Mobile specified RAM Pins
/CEm
: Chip Enable
MODE : Standby mode select
V
CC
m
: Supply Voltage
/LB, /UB : Byte data select
Note 1.
Some signals can be applied because this pin is not internally connected.
2.
Leave this pin connected to V
SS
or unconnected (Recommended to connected to V
SS
).
Remark
Refer to
Package Drawings
for the index mark.
Data Sheet M15411EJ4V0DS
3
MC-242444
Block Diagram
V
CC
f
A0 - A20
A0 - A20
/RESET
/CEf
CIOf
/WP(ACC)
32 M-bit Flash Memory
4,194,304 words by 8 bits
2,097,152 words by 16 bits
RY (/BY)
V
SS
V
CC
m
A0 - A19
V
SS
I/O0 - I/O15, A-1
/WE
/OE
/CEm
MODE
/LB
/UB
16 M-bit Mobile Specified RAM
(1,048,576 words by 16 bits)
4
Data Sheet M15411EJ4V0DS
MC-242444
Bus Operations Table
Operation
Flash Memory
Mobile specified RAM
MODE
H
L
H
Note 2
×
×
H
L
H
H
Hi-Z
Data Out
Data Out
×
Note 2
H
L
Data In
Data In
×
Note 2
×
×
Hi-Z or
Data In/Out
×
L
×
×
×
×
Note 3
L
×
×
×
L
×
×
H
×
×
L
×
×
L
H
H
Write
(Mobile specified RAM)
H
Note 3
L
H
L
L
L
H
L
Hi-Z
×
L
Hi-Z
Data In
×
×
L
×
×
H
Hi-Z or
Data In/Out
Hi-Z
Data Out
Hi-Z
Hi-Z
Data Out
Hi-Z
Data In
Hi-Z or
Data In/Out
Hi-Z or
Data In/Out
Hi-Z
Data Out
Hi-Z
Data Out
Data In
Hi-Z
Data In
/LB
×
/UB
×
/OE
×
/WE
×
Common
I/O0 - I/O7
Hi-Z
I/O8-I/O15
Hi-Z
/RESET /CEf CIOf /WP(ACC) /CEm
Full standby Standby Mode 1
Standby Mode 2
Output disable
Read (Flash
Memory
Note 1
)
Write (Flash
Memory)
BYTE mode
WORD mode
BYTE mode
WORD mode
V
ID
×
H
L
H
H
L
L
×
L
H
L
H
×
×
×
H
H
×
×
H
H
L
Temporary sector group
unprotect
Boot block sector protect
Flash Memory hardware reset
Read
(Mobile specified RAM)
Caution Other operations except for indicated in this table are inhibited.
Notes 1.
When /OE = V
IL
, V
IL
can be applied to /WE. When /OE = V
IH
, a write operation is started.
2.
Mobile specified RAM should be Standby.
3.
Flash Memory should be Standby or Hardware reset.
Remarks 1.
H : V
IH
, L : V
IL
,
×
: V
IH
or V
IL
2.
Sector group protection and read the product ID are using a command.
3.
MODE pin must be fixed to H during active operation.
4.
Refer to
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E)
for the
flash memory bus operations.
Data Sheet M15411EJ4V0DS
5
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