SA58672
3.0 W mono class-D audio amplifier
Rev. 04 — 8 June 2009
Product data sheet
1. General description
The SA58672 is a mono, filter-free class-D audio amplifier which is available in a 9 bump
WLCSP (Wafer Level Chip-Size Package) and 10-terminal HVSON packages.
The SA58672 features shutdown control. Improved immunity to noise and RF rectification
is increased by high PSRR and differential circuit topology. Fast start-up time and very
small WLCSP package makes it an ideal choice for both cellular handsets and PDAs.
The SA58672 delivers 1.7 W at 5 V and 800 mW at 3.6 V into 8
Ω.
It delivers 3.0 W at 5 V
and 1.6 W at 3.6 V into 4
Ω.
The maximum power efficiency is excellent at 90 % into 8
Ω
and 84 % to 88 % into 4
Ω.
The SA58672 provides thermal and short-circuit shutdown
protection.
2. Features
I
Output power
N
3.0 W into 4
Ω
at 5 V
N
1.6 W into 4
Ω
at 3.6 V
N
1.7 W into 8
Ω
at 5 V
N
800 mW into 8
Ω
at 3.6 V
I
Power supply range: 2.0 V to 5.5 V
I
Shutdown control
I
High SVRR:
−77
dB at 217 Hz
I
Fast start-up time: 7.0 ms
I
Low supply current
I
Low shutdown current
I
Short-circuit and thermal protection
I
Space savings with 1.66 mm
×
1.71 mm
×
0.6 mm 9 bump WLCSP package
I
Low junction to ambient thermal resistance of 100 K/W with adequate heat sinking of
WLCSP
I
Enhanced power dissipation with 3.0 mm
×
3.0 mm
×
0.85 mm HVSON10 package
NXP Semiconductors
SA58672
3.0 W mono class-D audio amplifier
3. Applications
I
I
I
I
I
I
Wireless and cellular handsets and PDAs
Portable DVD player
USB speakers
Notebook PC
Portable radio and gaming
Educational toys
4. Ordering information
Table 1.
Ordering information
Package
Name
SA58672TK
SA58672UK
HVSON10
WLCSP9
Description
plastic thermal enhanced very thin small outline package; no leads;
10 terminals; body 3
×
3
×
0.85 mm
wafer level chip-size package; 9 bumps; 1.66
×
1.71
×
0.6 mm
Version
SOT650-1
SA58672UK
Type number
5. Block diagram
battery
CS
PVDD, AVDD
Rf
Ri
positive
differential
input
INP
bypass
V
P
bypass
internal biasing
PWM
H-BRIDGE
RL = 8
Ω
OUTP
negative
differential
input
Ri
INM
bypass
OUTM
Rf
300 kΩ
SHUTDOWN
CONTROL
INTERNAL
OSCILLATOR
V
IH
V
IL
SD
AGND, PGND
002aad820
Fig 1.
Block diagram
SA58672_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 8 June 2009
2 of 27
NXP Semiconductors
SA58672
3.0 W mono class-D audio amplifier
6. Pinning information
6.1 Pinning
SA58672UK
bump A1
index area
A
1
B
C
A
B
C
001aai332
1
2
3
2
AGND
PVDD
SD
3
OUTM
PGND
OUTP
002aad854
INP
AVDD
INM
Transparent top view
Transparent top view
Fig 2.
Pin configuration for WLCSP9
terminal 1
index area
SD
AVDD
INM
INP
AGND
1
2
3
4
5
DAP
(1)
Fig 3.
Ball mapping for WLCSP9
10 OUTP
9
PVDD
PGND
OUTM
n.c.
SA58672TK
8
7
6
002aad822
Transparent top view
(1) Exposed Die Attach Paddle (DAP).
Fig 4.
Pin configuration for HVSON10
SA58672_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 8 June 2009
3 of 27
NXP Semiconductors
SA58672
3.0 W mono class-D audio amplifier
6.2 Pin description
Table 2.
Symbol
INP
AVDD
INM
AGND
PVDD
SD
OUTM
PGND
OUTP
n.c.
DAP
Pin description
Pin
WLCSP9
A1
B1
C1
A2
B2
C2
A3
B3
C3
-
-
HVSON10
4
2
3
5
9
1
7
8
10
6
(DAP)
channel positive input
analog supply voltage (level same as PVDD)
channel negative input
analog ground
power supply voltage (level same as AVDD)
channel shutdown input (active LOW)
channel negative output
power ground
channel positive output
not connected
exposed die attach paddle; connect to ground plane heat
spreader
Description
7. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DD
V
I
P
Parameter
supply voltage
input voltage
power dissipation
Conditions
Active mode
Shutdown mode
pin SD
other pins
WLCSP9;
derating factor 10 mW/K
T
amb
= 25
°C
T
amb
= 75
°C
T
amb
= 85
°C
HVSON10;
derating factor 25 mW/K
T
amb
= 25
°C
T
amb
= 75
°C
T
amb
= 85
°C
T
amb
T
j
T
stg
V
ESD
ambient temperature
junction temperature
storage temperature
electrostatic discharge
voltage
human body model
machine model
charged-device model
operating in free air
operating
-
-
-
−40
−40
−65
±2500
±100
±750
3.12
1.87
1.62
+85
+150
+150
-
-
-
W
W
W
°C
°C
°C
V
V
V
-
-
-
1250
750
650
mW
mW
mW
Min
−0.3
−0.3
GND
−0.3
Max
+6.0
+7.0
V
DD
V
DD
+ 0.3
Unit
V
V
V
V
SA58672_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 8 June 2009
4 of 27
NXP Semiconductors
SA58672
3.0 W mono class-D audio amplifier
8. Static characteristics
Table 4.
Static characteristics
T
amb
= 25
°
C, unless otherwise specified
[1]
.
Symbol
V
DD
|V
O(offset)
|
Parameter
supply voltage
output offset voltage
measured differentially;
inputs AC grounded;
G
v
= 6 dB;
V
DD
= 2.0 V to 5.5 V
V
DD
= 2.0 V to 5.5 V
V
DD
= 2.0 V to 5.5 V
inputs are shorted together;
V
DD
= 2.0 V to 5.5 V
V
DD
= 5.5 V; V
I
= V
DD
V
DD
= 5.5 V; V
I
= 0 V
V
DD
= 5.5 V; no load
V
DD
= 5.0 V; no load
V
DD
= 3.6 V; no load
V
DD
= 2.5 V; no load
I
DD(sd)
V
SD
Z
i
R
DSon
shutdown mode supply current no input signal; V
SD
= GND
voltage on pin SD
input impedance
drain-source on-state
resistance
device ON
device OFF
V
DD
= 2.0 V to 5.5 V
static; V
DD
= 5.5 V
static; V
DD
= 3.6 V
static; V
DD
= 2.5 V
Z
o(sd)
f
sw
G
v(cl)
shutdown mode output
impedance
switching frequency
closed-loop voltage gain
V
SD
= 0.35 V
V
DD
= 2.5 V to 5.5 V
V
DD
= 2.0 V to 5.5 V; R
i
in kΩ
-
-
-
1.3
GND
260
-
-
-
-
250
260 kΩ
/ R
i
Conditions
Min
2.0
-
Typ
-
5
Max
5.5
25
Unit
V
mV
PSRR
V
i(cm)
CMRR
I
IH
I
IL
I
DD
power supply rejection ratio
common-mode input voltage
common mode rejection ratio
HIGH-level input current
LOW-level input current
supply current
-
0.5
-
-
-
-
−93
-
−69
-
-
3.4
3.2
2.6
2.2
10
-
-
300
430
475
550
2
300
300 kΩ
/ R
i
−70
V
DD
−
0.8
−50
50
5
4.2
4.0
3.4
3.0
1000
V
DD
0.35
340
-
-
-
-
350
340 kΩ
/ R
i
dB
V
dB
µA
µA
mA
mA
mA
mA
nA
V
V
kΩ
mΩ
mΩ
mΩ
kΩ
kHz
V/V
[1]
V
DD
is the supply voltage on pin PVDD and pin AVDD.
GND is the ground supply voltage on pin PGND and pin AGND.
SA58672_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 8 June 2009
5 of 27
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