phototransistors narrow rcvng angle 935nm
参数名称 | 属性值 |
Manufacture | TT electronics |
产品种类 Product Category | Phototransistors |
RoHS | Yes |
Maximum Power Dissipati | 100 mW |
Maximum Dark Curre | 100 nA |
封装 / 箱体 Package / Case | T-1 |
Collector- Emitter Voltage VCEO Max | 30 V |
Collector-Emitter Breakdown Voltage | 30 V |
Collector-Emitter Saturation Voltage | 0.4 V |
最大工作温度 Maximum Operating Temperature | + 100 C |
最小工作温度 Minimum Operating Temperature | - 40 C |
Produc | Phototransistors |
工厂包装数量 Factory Pack Quantity | 100 |
类型 Type | Chi |
Wavelength | 935 nm |
OP505B | OP505C | OP505D | |
---|---|---|---|
描述 | phototransistors narrow rcvng angle 935nm | phototransistors photo transistor | phototransistors photo transistor |
Manufacture | TT electronics | TT electronics | TT electronics |
产品种类 Product Category |
Phototransistors | Phototransistors | Phototransistors |
RoHS | Yes | Yes | Yes |
工厂包装数量 Factory Pack Quantity |
100 | 100 | 100 |
Maximum Power Dissipati | 100 mW | - | 100 mW |
封装 / 箱体 Package / Case |
T-1 | - | T-1 |
Collector- Emitter Voltage VCEO Max | 30 V | - | 30 V |
Collector-Emitter Breakdown Voltage | 30 V | - | 30 V |
Collector-Emitter Saturation Voltage | 0.4 V | - | 0.4 V |
最大工作温度 Maximum Operating Temperature |
+ 100 C | - | + 100 C |
最小工作温度 Minimum Operating Temperature |
- 40 C | - | - 40 C |
Produc | Phototransistors | - | Phototransistors |
Wavelength | 935 nm | - | 935 nm |
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