PRELIMINARY
CY7C1522AV18
CY7C1529AV18
CY7C1523AV18
CY7C1524AV18
72-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
Features
• 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
• 300-MHz clock for high bandwidth
• 2-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) @ 300 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
• Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
• Synchronous internally self-timed writes
• DDR-II operates with 1.5 cycle read latency when DLL
is enabled
• Operates like a DDR I device with 1 cycle read latency
in DLL off mode
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–V
DD
)
• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)
• Offered in lead-free and non lead-free packages
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Functional Description
The CY7C1522AV18, CY7C1529AV18, CY7C1523AV18 and
CY7C1524AV18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II SIO (Double Data Rate Separate I/O)
architecture. The DDR-II SIO consists of two separate ports to
access the memory array. The Read port has dedicated Data
outputs and the Write port has dedicated Data inputs to
completely eliminate the need to “turn around’ the data bus
required with common I/O devices. Access to each port is
accomplished using a common address bus. Addresses for
Read and Write are latched on alternate rising edges of the
input (K) clock. Write data is registered on the rising edges of
both K and K. Read data is driven on the rising edges of C and
C if provided, or on the rising edge of K and K if C/C are not
provided. Each address location is associated with two 8-bit
words in the case of CY7C1522AV18, two 9-bit words in the
case of CY7C1529AV18, two 18-bit words in the case of
CY7C1523AV18, and two 36-bit words in the case of
CY7C1524AV18, that burst sequentially into or out of the
device.
Asynchronous inputs include output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to
the two output echo clocks CQ/CQ, eliminating the need for
separately capturing data from each individual DDR-II SIO
SRAM in the system design. Output data clocks (C/C) enable
maximum system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Configuration
CY7C1522AV18 – 8M x 8
CY7C1529AV18 – 8M x 9
CY7C1523AV18 – 4M x 18
CY7C1524AV18 – 2M x 36
Cypress Semiconductor Corporation
Document #: 001-06981 Rev. *B
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised September 20, 2006
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