JMnic
Product Specification
Silicon PNP Power Transistors
2SA1264N
DESCRIPTION
・With
TO-3P(I) package
・Complement
to type 2SC3181N
・2SA1264
with short pin
APPLICATIONS
・Power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-5
-8
-0.8
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1264N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA ,I
B
=0
-120
V
V
CEsat
V
BE
Collector-emitter saturation voltage
I
C
=-6A; I
B
=-0.6A
I
C
=-4A ; V
CE
=-5V
-2.0
V
Base-emitter voltage
-1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-5
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-5
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V
55
160
h
FE-2
DC current gain
I
C
=-4A ; V
CE
=-5V
35
f
T
C
ob
Transition frequency
I
C
=-1A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V ;f=1MHz
30
MHz
Output capacitance
420
pF
h
FE-1
Classifications
R
55-110
O
80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1264N
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1264N
4
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