JMnic
Product Specification
Silicon PNP Power Transistors
2SA1220 2SA1220A
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC2690/2690A
APPLICATIONS
・Audio
frequency power amplifier
・High
frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SA1220
V
CBO
Collector-base voltage
2SA1220A
2SA1220
V
CEO
Collector-emitter voltage
2SA1220A
V
EBO
I
C
I
CM
I
B
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55½+150
℃
℃
Open collector
Open base
-160
-5
-1.2
-2.5
-0.3
1.2
W
V
A
A
A
Open emitter
-160
-120
V
CONDITIONS
VALUE
-120
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-1A; I
B
=-0.2A
I
C
=-1A ;I
B
=-0.2A
V
CB
=-120V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-5mA ; V
CE
=-5V
I
C
=-0.3A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V f=1MHz
I
C
=-0.2A ; V
CE
=5V
2SA1220 2SA1220A
MIN
TYP.
MAX
-0.7
-1.3
-1
-1
UNIT
V
V
μA
μA
35
60
26
175
320
pF
MHz
h
FE-2
Classifications
R
60-120
Q
100-200
P
160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1220 2SA1220A
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1220 2SA1220A
4
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