JMnic
Product Specification
Silicon PNP Power Transistors
2SA1216
DESCRIPTION
・With
MT-200 package
・Complement
to type 2SC2922
APPLICATIONS
・Audio
and general purpose
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-180
-180
-5
-17
-5
200
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-25mA ; I
B
=0
I
C
=-8A ;I
B
=-0.8A
V
CB
=-180V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-8A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-2A ; V
CE
=-12V
30
500
40
MIN
-180
TYP.
2SA1216
MAX
UNIT
V
-2.0
-100
-100
V
μA
μA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-10A;R
L
=Ω
I
B1
=-I
B2
=-1A
V
CC
=-40V
0.30
0.70
0.20
μs
μs
μs
h
FE
classifications
O
30-60
Y
50-100
P
70-140
G
90-180
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1216
Fig.2 outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1216
4
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