BGU8007
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo
and Compass
Rev. 2 — 30 March 2012
Product data sheet
1. Product profile
1.1 General description
The BGU8007 is a Low Noise Amplifier (LNA) for GNSS receiver applications in a plastic
leadless 6-pin, extremely small SOT886 package. The BGU8007 requires only one
external matching inductor and one external decoupling capacitor.
The BGU8007 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance when jamming signals from co-existing cellular
transmitters are present. At low jamming power levels it delivers 19 dB gain at a noise
figure of 0.75 dB. During high jamming power levels, resulting for example from a cellular
transmit burst, it temporarily increases its bias current to improve sensitivity.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Covers full GNSS L1 band, from 1559 MHz to 1610 MHz
Noise figure (NF) = 0.75 dB
Excellent low NF < 1 dB in the presence of strong jamming signals
Gain 19 dB
High input 1 dB compression point P
i(1dB)
of
11
dBm
High out of band IP3
i
of 4 dBm
Supply voltage 1.5 V to 2.5 V
Power-down mode current consumption < 1
A
Optimized performance at low supply current of 4.6 mA
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor and one supply decoupling capacitor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Small 6-pin leadless package 1 mm
1.45 mm
0.5 mm
110 GHz transit frequency - SiGe:C technology
NXP Semiconductors
BGU8007
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
1.3 Applications
LNA for GPS, GLONASS, Galileo and Compass (BeiDou) in smart phones, feature
phones, tablet PCs, Personal Navigation Devices, Digital Still Cameras, Digital Video
Cameras, RF Front End modules, complete GPS chipset modules and theft protection
(laptop, ATM)
1.4 Quick reference data
Table 1.
Quick reference data
f = 1559 MHz to 1610 MHz; V
CC
= 1.8 V; P
i
<
40 dBm; T
amb
= 25
C; input matched to 50
using
a 5.6 nH inductor; unless otherwise specified.
Symbol Parameter
V
CC
I
CC
supply voltage
supply current
Conditions
RF input AC coupled
V
ENABLE
0.8 V
P
i
<
40
dBm
P
i
=
20
dBm
G
p
NF
power gain
noise figure
P
i
<
40
dBm, no jammer
P
i
=
20
dBm, no jammer
P
i
<
40
dBm, no jammer
P
i
<
40
dBm, no jammer
P
i
=
20
dBm, no jammer
P
i(1dB)
input power at 1 dB
gain compression
f = 1559 MHz to 1610 MHz
V
CC
= 1.5 V
V
CC
= 1.8 V
V
CC
= 2.2 V
IP3
i
input third-order intercept point
f = 1.575 GHz
V
CC
= 1.5 V
V
CC
= 1.8 V
V
CC
= 2.2 V
[1]
[2]
[3]
PCB losses are subtracted.
Including PCB losses.
f
1
= 1713 MHz; f
2
= 1851 MHz; P
1
= P
2
=
30
dBm.
[3]
[3]
[3]
[1]
[2]
[2]
Min Typ Max Unit
1.5
3.3
8.4
-
4.6
2.5
5.9
V
mA
11.9 14.7 mA
17.0 19.0 20.5 dB
18.5 20.5 21.5 dB
-
-
-
15
14
13
1
1
2
0.75 1.1
0.80 1.2
1.0
12
11
10
4
4
5
1.4
-
-
-
-
-
-
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
GND
GND
RF_IN
V
CC
ENABLE
RF_OUT
1
2
3
Transparent
top view
2
1
sym129
Simplified outline
6
5
4
Graphic symbol
4
5
3
6
BGU8007
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 30 March 2012
2 of 19
NXP Semiconductors
BGU8007
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
3. Ordering information
Table 3.
Ordering information
Package
Name
BGU8007
XSON6
Description
Version
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
1.45
0.5 mm
Type number
4. Marking
Table 4.
BGU8007
Marking codes
Marking code
UZ
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
V
ENABLE
V
RF_IN
V
RF_OUT
P
i
P
tot
T
stg
T
j
V
ESD
Parameter
supply voltage
voltage on pin ENABLE
voltage on pin RF_IN
voltage on pin RF_OUT
input power
total power dissipation
storage temperature
junction temperature
electrostatic discharge
voltage
Human Body Model (HBM);
According JEDEC standard
22-A114E
Charged
Device Model (CDM);
According JEDEC standard
22-C101B
[1]
[2]
[3]
T
sp
is the temperature at the soldering point of the emitter lead.
Warning: due to internal ESD diode proctection, the applied DC voltage should not exceed V
CC
+ 0.6 and
shall not exceed 5.0 V in order to avoid excess current.
The RF input and RF output are AC coupled through internal DC blocking capacitors.
Conditions
RF input AC coupled
V
ENABLE
< V
CC
+ 0.6
DC; V
RF_IN
< V
CC
+ 0.6
DC; V
RF_OUT
< V
CC
+ 0.6
T
sp
130
C
[2]
[2][3]
[2][3]
Min
0.5
0.5
0.5
0.5
-
[1]
Max
+4.0
+4.0
+4.0
+4.0
0
55
+150
150
2
Unit
V
V
V
V
dBm
mW
C
C
kV
65
-
-
-
1
kV
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
225
Unit
K/W
BGU8007
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 30 March 2012
3 of 19
NXP Semiconductors
BGU8007
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
7. Characteristics
Table 7.
Characteristics
f = 1559 MHz to 1610 MHz; V
CC
= 1.8 V; V
ENABLE
>= 0.8 V; P
i
<
40 dBm; T
amb
= 25
C; input matched to 50
using a
5.6 nH inductor; unless otherwise specified.
Symbol Parameter
V
CC
I
CC
supply voltage
supply current
Conditions
RF input AC coupled
V
ENABLE
0.8 V
P
i
<
40
dBm
P
i
=
20
dBm
V
ENABLE
0.3 V
T
amb
G
p
ambient temperature
power gain
T
amb
= 25
C
P
i
<
40
dBm, no jammer
P
i
=
20
dBm, no jammer
P
jam
=
20
dBm; f
jam
= 850 MHz
P
jam
=
20
dBm; f
jam
= 1850 MHz
40 C
T
amb
+85
C
P
i
<
40
dBm, no jammer
P
i
=
20
dBm, no jammer
P
jam
=
20
dBm; f
jam
= 850 MHz
P
jam
=
20
dBm; f
jam
= 1850 MHz
RL
in
RL
out
ISL
NF
input return loss
output return loss
isolation
noise figure
T
amb
= 25
C
P
i
<
40
dBm, no jammer
P
i
<
40
dBm, no jammer
P
i
=
20
dBm, no jammer
P
jam
=
20
dBm; f
jam
= 850 MHz
P
jam
=
20
dBm; f
jam
= 1850 MHz
40 C
T
amb
+85
C
P
i
<
40
dBm, no jammer
P
i
=
20
dBm, no jammer
P
jam
=
20
dBm; f
jam
= 850 MHz
P
jam
=
20
dBm; f
jam
= 1850 MHz
[2]
[2]
[2]
[2]
[1]
[2]
[2]
[2]
[2]
Min Typ Max
1.5
3.3
8.4
-
40
-
4.6
-
2.5
5.9
1
Unit
V
mA
mA
A
C
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
11.9 14.7
+25 +85
17.0 19.0 20.5
18.5 20.5 21.5
18.5 20.5 21.5
18.5 20.5 21.5
16
17
17
17
4
6
15
15
22
-
-
-
-
-
-
-
-
-
-
-
-
-
5.5
9
26
27
24
21
22
22
22
-
-
-
-
-
P
i
<
40
dBm
P
i
=
20
dBm
P
i
<
40
dBm
P
i
=
20
dBm
0.75 1.1
0.80 1.2
1.0
0.8
1.1
-
-
-
-
1.4
1.2
1.5
1.5
1.7
1.5
1.8
BGU8007
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 30 March 2012
4 of 19
NXP Semiconductors
BGU8007
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
Table 7.
Characteristics
…continued
f = 1559 MHz to 1610 MHz; V
CC
= 1.8 V; V
ENABLE
>= 0.8 V; P
i
<
40 dBm; T
amb
= 25
C; input matched to 50
using a
5.6 nH inductor; unless otherwise specified.
Symbol Parameter
P
i(1dB)
Conditions
V
CC
= 1.5 V
V
CC
= 1.8 V
V
CC
= 2.2 V
f = 806 MHz to 928 MHz
V
CC
= 1.5 V
V
CC
= 1.8 V
V
CC
= 2.2 V
f = 1612 MHz to 1909 MHz
V
CC
= 1.5 V
V
CC
= 1.8 V
V
CC
= 2.2 V
IP3
i
input third-order intercept point
f = 1.575 GHz
V
CC
= 1.5 V
V
CC
= 1.8 V
V
CC
= 2.2 V
t
on
t
off
[1]
[2]
[3]
[4]
[5]
[4]
[4]
[4]
[5]
[5]
[3]
[3]
[3]
[3]
[3]
[3]
Min Typ Max
15
14
13
13
13
12
12
11
10
1
1
2
-
-
12
11
10
10
10
9
9
8
7
4
4
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
1
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
s
s
input power at 1 dB gain compression f = 1559 MHz to 1610 MHz
turn-on time
turn-off time
PCB losses are subtracted.
Including PCB losses.
Out of band.
f
1
= 1713 MHz; f
2
= 1851 MHz; P
1
= P
2
=
30
dBm.
Within 10 % of the final gain.
Table 8.
ENABLE (pin 5)
40
C
T
amb
+85
C; 1.5 V
V
CC
2.5 V
V
ENABLE
(V)
0.3
0.8
State
OFF
ON
BGU8007
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 30 March 2012
5 of 19
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