JMnic
Product Specification
Silicon PNP Power Transistors
2SB631 2SB631K
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD600/K
・High
breakdown voltage V
CEO:
-100/-120V
・High
current: -1A
・Low
saturation voltage,excellent h
FE
linearity
APPLICATIONS
・For
low-frequency power
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB631
V
CBO
Collector-base voltage
2SB631K
2SB631
V
CEO
Collector-emitter voltage
2SB631K
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
8
150
-55~150
℃
℃
Open collector
Open base
-120
-5
-1
-2
1
W
V
A
A
Open emitter
-120
-100
V
CONDITIONS
VALUE
-100
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB631
I
C
=-1mA; R
BE
=∞
2SB631K
2SB631
I
C
=-10μA ;I
E
=0
2SB631K
I
E
=-10μA ;I
C
=0
I
C
=-0.5A ;I
B
=-50mA
I
C
=-0.5A ;I
B
=-50mA
V
CB
=-50V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-50mA ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
C
=-50mA ; V
CE
=-10V
f=1MHz ; V
CB
=-10V
CONDITIONS
2SB631 2SB631K
MIN
-100
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-120
-100
V
-120
-5
-0.4
-1.2
-1
-1
60
20
110
30
MHz
pF
320
V
V
V
μA
μA
V
(BR)CBO
Collector-base
breakdown voltage
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
Switching times
t
f
t
off
t
stg
Fall time
Turn-off time
Storage time
I
C
=-500mA ; V
CE
=-12V
I
B1
=-I
B2
=-50mA
0.08
0.10
0.60
μs
μs
μs
h
FE-1
Classifications
D
60-120
E
100-200
F
160-320
2
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