The documentation and process conversion measures
necessary to comply with this document shall be
completed by 4 May 2010.
INCH-POUND
MIL-PRF-19500/397J
4 February 2010
SUPERSEDING
MIL-PRF-19500/397H
17 June 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON,
TYPES 2N3743, 2N3743U4, 2N4930, 2N4930U4, 2N4931, AND 2N4931U4,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, high-voltage transistor.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-39), figure 2 (U4), and figures 3 and 4 for JANHC and JANKC (die)
dimensions.
*
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
Type
P
T
(1)
T
A
=
+25°C
W
1.0
1.0
1.0
P
T
(1)
T
PCB
=
+25°C
W
P
T
(1)
T
C
=
+25°C
W
5
5
5
10
10
10
R
θJA
(2)
°C/W
175
175
175
R
θJPCB
(2)
°C/W
R
θJC
(2)
°C/W
30
30
30
15
15
15
V
CBO
V
EBO
V
CEO
I
C
T
J
and
T
STG
°C
2N3743
2N4930
2N4931
2N3743U4
2N4930U4
2N4931U4
1.0
1.0
1.0
175
175
175
V dc
300
200
250
300
200
250
V dc
5
5
5
5
5
5
V dc
300
200
250
300
200
250
mA dc
200
200
200
200
200
200
-65 to
+200
* (1) For derating see figures 5, 6, 7, and 8.
* (2) For thermal impedance curves see figures 9, 10, and 11.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
https://assist.daps.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/397J
1.4 Primary electrical characteristics at T
A
= +25°C.
|h
fe
|
I
C
= 10 mA dc
V
CE
= 20 V dc
f = 20 MHz
Min
Max
2.0
8.0
h
FE1
(1)
I
C
= 0.1 mA dc
V
CE
= 10 V dc
h
FE4
(1)
I
C
= 30 mA dc
V
CE
= 10 V dc
V
BE(sat)2
(1)
I
C
= 30 mA
dc
I
B
= 3 mA dc
V dc
30
50
200
1.2
V
CE(sat)1
(1)
I
C
= 30 mA dc
I
B
= 3 mA dc
V dc
1.2
C
obo
I
E
= 0
V
CB
= 20 V dc
f
≥
0.1 MHz
pF
15
Limits
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch
or
https://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/397J
Symbol
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.019
0.41
0.48
.500
.750
12.7
19.0
.016
.019
0.41
0.48
.050
1.27
.250
.030
.029
.045
.028
.034
.010
45° TP
.100
6.35
0.76
0.74
1.14
0.71
0.86
0.25
45° TP
2.54
TO-39
Note
7
8,9
8,9
8,9
8,9
6
5
3,4
3, 4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
The device may be measured by direct methods or by the gauge and gauging procedure.
8. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in L
1
and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (TO-39).
3
MIL-PRF-19500/397J
BW
CH
LW1
1
U4
BL
Q2
LW2
(2X)
LL1
Q1 (2X)
2
LS2
Ls1
3
LL2 (2X)
LH
(3X)
Symbol
Min
.215
.145
.049
.135
.047
.085
.045
.070
.035
.030
.020
Inches
Max
.225
.155
.075
.020
.145
.057
.125
.075
.095
.048
.070
.035
Dimensions
Min
5.46
3.68
1.24
3.43
1.19
2.16
1.14
1.78
0.89
0.76
0.51
Collector
Base
Emitter
Millimeters
Max
5.72
3.94
1.91
0.51
3.68
1.45
3.18
1.90
2.41
1.22
1.78
0.89
BL
BW
CH
LH
LW1
LW2
LL1
LL2
LS1
LS2
Q1
Q2
Terminal
1
2
3
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 2. Physical dimensions and configuration (U4).
4
MIL-PRF-19500/397J
Letter
Inches
A
C
Min
.041
.041
Max
.041
.041
Dimensions
Millimeters
Min
1.04
1.04
Max
1.04
1.04
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die are:
Thickness:
.006 inch (0.15 mm) to .012 inch (0.30 mm).
Top metal:
Aluminum 17,500 Å minimum, 20,000 Å nominal.
Back metal:
Gold 2,500 Å minimum, 3,000 Å nominal.
Back side:
Collector.
Bonding pad:
B = .004 inch (0.10 mm) x .005 inch (0.13 mm).
E = .004 inch (0.10 mm) x .0055 inch (0.14 mm).
4. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
5
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