电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

C124G102K2CH5CM

产品描述CAPACITOR, CERAMIC, MULTILAYER, 200 V, C0G, 0.001 uF, THROUGH HOLE MOUNT
产品类别无源元件   
文件大小1MB,共16页
制造商KEMET(基美)
官网地址http://www.kemet.com
下载文档 详细参数 全文预览

C124G102K2CH5CM概述

CAPACITOR, CERAMIC, MULTILAYER, 200 V, C0G, 0.001 uF, THROUGH HOLE MOUNT

C124G102K2CH5CM规格参数

参数名称属性值
最大工作温度125 Cel
最小工作温度-55 Cel
负偏差1 %
正偏差1 %
额定直流电压urdc200 V
加工封装描述RADIAL LEADED
状态ACTIVE
端子涂层TIN LEAD OVER NICKEL
安装特点THROUGH HOLE MOUNT
制造商系列C052
电容1.00E-3 uF
包装形状RECTANGULAR PACKAGE
电容类型CERAMIC
端子形状WIRE
温度系数30ppm/Cel
温度特性代码C0G
多层Yes

文档预览

下载PDF文档
MULTILAYER CERAMIC CAPACITORS/AXIAL
& RADIAL LEADED
Multilayer ceramic capacitors are available in a
variety of physical sizes and configurations, including
leaded devices and surface mounted chips. Leaded
styles include molded and conformally coated parts
with axial and radial leads. However, the basic
capacitor element is similar for all styles. It is called a
chip and consists of formulated dielectric materials
which have been cast into thin layers, interspersed
with metal electrodes alternately exposed on opposite
edges of the laminated structure. The entire structure is
fired at high temperature to produce a monolithic
block which provides high capacitance values in a
small physical volume. After firing, conductive
terminations are applied to opposite ends of the chip to
make contact with the exposed electrodes.
Termination materials and methods vary depending on
the intended use.
TEMPERATURE CHARACTERISTICS
Ceramic dielectric materials can be formulated with
Class III:
General purpose capacitors, suitable
a wide range of characteristics. The EIA standard for
for by-pass coupling or other applications in which
ceramic dielectric capacitors (RS-198) divides ceramic
dielectric losses, high insulation resistance and
dielectrics into the following classes:
stability of capacitance characteristics are of little or
no importance. Class III capacitors are similar to Class
Class I:
Temperature compensating capacitors,
II capacitors except for temperature characteristics,
suitable for resonant circuit application or other appli-
which are greater than ± 15%. Class III capacitors
cations where high Q and stability of capacitance char-
have the highest volumetric efficiency and poorest
acteristics are required. Class I capacitors have
stability of any type.
predictable temperature coefficients and are not
affected by voltage, frequency or time. They are made
KEMET leaded ceramic capacitors are offered in
from materials which are not ferro-electric, yielding
the three most popular temperature characteristics:
superior stability but low volumetric efficiency. Class I
C0G:
Class I, with a temperature coefficient of 0 ±
capacitors are the most stable type available, but have
30 ppm per degree C over an operating
the lowest volumetric efficiency.
temperature range of - 55°C to + 125°C (Also
known as “NP0”).
Class II:
Stable capacitors, suitable for bypass
X7R:
Class II, with a maximum capacitance
or coupling applications or frequency discriminating
change of ± 15% over an operating temperature
circuits where Q and stability of capacitance char-
range of - 55°C to + 125°C.
acteristics are not of major importance. Class II
Z5U:
Class III, with a maximum capacitance
capacitors have temperature characteristics of ± 15%
change of + 22% - 56% over an operating tem-
or less. They are made from materials which are
perature range of + 10°C to + 85°C.
ferro-electric, yielding higher volumetric efficiency but
less stability. Class II capacitors are affected by
Specified electrical limits for these three temperature
temperature, voltage, frequency and time.
characteristics are shown in Table 1.
SPECIFIED ELECTRICAL LIMITS
Parameter
Dissipation Factor: Measured at following conditions.
C0G – 1 kHz and 1 vrms if capacitance >1000pF
1 MHz and 1 vrms if capacitance 1000 pF
X7R – 1 kHz and 1 vrms* or if extended cap range 0.5 vrms
Z5U – 1 kHz and 0.5 vrms
Dielectric Stength: 2.5 times rated DC voltage.
Insulation Resistance (IR): At rated DC voltage,
whichever of the two is smaller
Temperature Characteristics: Range, °C
Capacitance Change without
DC voltage
* MHz and 1 vrms if capacitance
100 pF on military product.
Temperature Characteristics
C0G
X7R
2.5%
(3.5% @ 25V)
Z5U
0.10%
4.0%
Pass Subsequent IR Test
1,000 M
F
or 100 G
-55 to +125
0 ± 30 ppm/°C
1,000 M
F
or 100 G
-55 to +125
± 15%
1,000 M
or 10 G
F
+ 10 to +85
+22%,-56%
Table I
4
© KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, (864) 963-6300
语音编码问题 源码和问题都写上,希望高手回答
#define SIGN_BIT (0x80) /* Sign bit for a A-law byte. */ #define QUANT_MASK (0xf) /* Quantization field mask. */ #define NSEGS (8) /* Number of A-law segments. */ #define SEG_SHIFT ......
ddssjj131421 DSP 与 ARM 处理器
设计实列+和一点小误差 供新同学参考学习
其实就是过孔与焊盘通孔的区别 这个P-V(过孔)532625 这个P-P(焊盘通孔) 532626 从3D的显示的PCB两者并无什么区别 如下图所示,但是加工板子的时候 放置P-V,PCB板厂就按接 ......
btty038 PCB设计
关于RSL10 SDK中Event Kernel部分的代码分析(下)
  首先,把上篇写的重点再回顾一下: (1) 底层 Event Kernel 是通过消息驱动的,消息的接收者称为 task, 但并非是 RTOS 中的任务概念。可以把一个 task 看作是一组消息处理函数(回调函数)的 ......
cruelfox 物联网大赛方案集锦
并联式开关电源的工作原理 开关电源原理与设计(连载八)
1-4-1.并联式开关电源的工作原理 图1-11-a是并联式开关电源的最简单工作原理图,图1-11-b是并联式开关电源输出电压的波形。图1-11-a中Ui是开关电源的工作电压,L是储能电感,K是控制开关,R是 ......
noyisi112 电源技术
关于RAWOS QUEUE BUFFER模块的疑惑
在测试程序中,一共两个任务 raw_task_create(&test_task_obj, (RAW_U8 *)"task1", 0, 3, 0, test_task_stack1, TEST_TASK_STK_SI ......
aqs19901115 嵌入式系统
c51基础知识
278077 ...
zzxia 51单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 119  2581  1913  975  2524  47  33  1  8  35 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved