TECHNICAL DATA
PNP SILICON SMALL SIGNAL TRANSISTOR
Qualified per MIL-PRF-19500/392
Devices
2N3485A
2N3486A
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
Symbol
R
θ
JA
R
θ
JC
2N3485A
2N3486A
60
60
5.0
600
0.4
2.0
-55 to +200
Max.
0.439
87
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
C
Unit
0
mC/W
0
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance Junction-to-Ambient
Junction-to-Case
1) Derate linearly 2.28 mW/
0
C above T
A
= +25
0
C
2) Derate linearly 11.43 mW/
0
C above T
C
= +25
0
C
TO-46*
(TO-206AB)
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CBO
Min.
60
10
10
50
10
Max.
Unit
Vdc
ηAdc
µAdc
ηAdc
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc
V
CB
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 3.5 Vdc
V
EB
= 5.0 Vdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3485A, 2N3486A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
2N3485A
2N3486A
2N3485A
2N3486A
2N3485A
2N3486A
2N3485A
2N3486A
2N3485A
2N3486A
h
FE
40
75
40
100
40
100
40
100
40
50
120
300
V
CE(sat)
0.4
1.6
1.3
2.6
Vdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
2N3485A
2N3486A
Magnitude of Small-Signal Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 20 Vdc, f = 100 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 2.0 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
Small-Signal Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
h
fe
40
100
2.0
10
8.0
30
pF
pF
h
fe
C
obo
C
ibo
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
