AP9962AGD
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Single Drive Requirement
▼
PDIP-8 Package
S2
D2
D1
D1
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G2
G1
S1
40V
25mΩ
7A
PDIP-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
7
5.5
20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
200810282
AP9962AGD
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=32V, V
GS
=0V
V
GS
= +20V
I
D
=7A
V
DS
=32V
V
GS
=4.5V
V
DS
=20V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=20Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
40
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
18
-
-
-
12
2.5
7.4
8
6
23
5.5
820
95
90
Max. Units
-
25
40
3
-
10
25
+100
20
-
-
-
-
-
-
1350
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=32V ,V
GS
=0V
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.7A, V
GS
=0V
Is=7A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
19
12
Max. Units
1.2
-
-
V
ns
nC
t
rr
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3. Mounted on 1 in
2
copper pad of FR4 board ;90℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9962AGD
30
30
T
A
=25 C
o
I
D
, Drain Current (A)
20
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
A
=150
o
C
20
10V
7.0V
5.0V
4.5V
10
10
V
GS
=3.0V
V
GS
=3.0V
0
0
0.4
0.8
1.2
1.6
2
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.8
I
D
=7A
o
T
A
=25 C
26
1.6
I
D
=7A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.4
22
1.2
1.0
18
0.8
14
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.2
10
2
8
1.8
6
I
S
(A)
o
T
j
=150 C
T
j
=25
o
C
V
GS
(th)
1.6
4
1.4
2
1.2
2.01E+08
0
0
0.4
0.8
1.2
1.6
1
-50
0
50
100
150
V
SD
,Source-to-Drain Voltage (V)
Junction Temperature (
o
C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9962AGD
14
1000
f=1.0MHz
12
V
GS
, Gate to Source Voltage (V)
I
D
=7A
800
10
C
iss
V
DS
=20V
V
DS
=24V
V
DS
=32V
600
6
C (pF)
400
200
8
4
2
C
oss
C
rss
0
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS ,
Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
10
100us
I
D
(A)
1ms
1
0.1
0.1
0.05
0.02
0.01
Single Pulse
10ms
100ms
1s
0.1
P
DM
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthia=90
o
C/W
Single Pulse
o
T
A
=25 C
0.01
0.1
1
10
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : PDIP-8
SYMBOLS
MIN
Millimeters
NOM
MAX
A
A1
E
3.60
0.38
2.90
0.36
1.10
0.76
0.20
9.00
6.10
7.62
8.30
3.18
4.50
----
3.95
0.46
1.45
0.98
0.28
9.60
6.65
7.94
9.65
2.540 BSC
----
5.40
----
5.00
0.56
1.80
1.20
0.36
10.20
7.20
8.26
11.00
----
A
D
B2
A2
A1
L
A2
B
B1
B2
C
D
E
E1
B
E1
B1
e
E2
e
L
C
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
E2
Part Marking Information & Packing : PDIP-8
9962AGD
YWWSSS
Part Number
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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