RURD660, RURD660S
Data Sheet
January 2000
File Number
3750.2
6A, 600V Ultrafast Diodes
The RURD660 and RURD660S are ultrafast diodes with soft
recovery characteristics (t
rr
< 55ns). They have low forward
voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49038.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURD660
RURD660S
PACKAGE
TO-251
TO-252
BRAND
RUR660
RUR660
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
(FLANGE)
CATHODE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A.
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD660
RURD660S
UNITS
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 155
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Maximum Lead Temperature for Soldering
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
PKG
600
600
600
6
12
60
50
10
-65 to 175
300
260
1
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
RURD660, RURD660S
Electrical Specifications
SYMBOL
V
F
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
I
F
= 6A
I
F
= 6A, T
C
= 150
o
C
I
R
V
R
= 600V
V
R
= 600V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 6A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
28
16
150
25
-
MAX
1.5
1.2
100
500
55
60
-
-
-
-
3
UNITS
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
30
500
I
R
, REVERSE CURRENT (µA)
100
175
o
C
I
F
, FORWARD CURRENT (A)
10
10
1
100
o
C
100
o
C
175
o
C
1
25
o
C
0.1
25
o
C
0.01
0.5
0
0.5
1
1.5
2
2.5
V
F
, FORWARD VOLTAGE (V)
0.001
0
100
200
300
400
500
600
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURD660, RURD660S
Typical Performance Curves
50
T
C
= 25
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
40
trr
30
ta
20
tb
75
(Continued)
90
T
C
= 100
o
C, dI
F
/dt = 200A/µs
60
45
30
trr
ta
tb
10
15
0
0.5
0
0.5
1
I
F
, FORWARD CURRENT (A)
6
1
I
F
, FORWARD CURRENT (A)
6
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
80
trr
60
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
100
6
5
DC
4
SQ. WAVE
3
2
1
0
145
40
ta
tb
20
0
0.5
1
I
F
, FORWARD CURRENT (A)
6
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
75
C
J
, JUNCTION CAPACITANCE (pF)
60
45
30
15
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
RURD660, RURD660S
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 20mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
4
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
