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RURP640CC

产品描述6 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小60KB,共4页
制造商Intersil ( Renesas )
官网地址http://www.intersil.com/cda/home/
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RURP640CC概述

6 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB

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RURP640CC, RURP650CC,
RURP660CC
April 1995
6A, 400V - 600V Ultrafast Dual Diodes
Package
JEDEC TO-220AB
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
The RURP640CC, RURP650CC, and RURP660CC are
ultrafast dual diodes with soft recovery characteristics (t
RR
<
55ns). They have low forward voltage drop and are silicon
nitride passivated ion-implanted epitaxial planar construc-
tion.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits, reduc-
ing power loss in the switching transistors.
PACKAGE AVAILABILITY
PART NUMBER
RURP640CC
RURP650CC
RURP660CC
PACKAGE
TO-220AB
TO-220AB
TO-220AB
BRAND
RURP640C
RURP650C
RURP660C
Symbol
K
A
1
A
2
NOTE: When ordering, use the entire part number.
Formerly developmental type TA49038.
Absolute Maximum Ratings
(per leg) T
C
= +25
o
C, Unless Otherwise Specified
RURP640CC
400
400
400
6
12
60
50
10
-65 to +175
RURP650CC
500
500
500
6
12
60
50
10
-65 to +175
RURP660CC
600
600
600
6
12
60
50
10
-65 to +175
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +155
o
C)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
4007
6-55

RURP640CC相似产品对比

RURP640CC RURP650CC
描述 6 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 6 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AB

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