MUR820, RURP820
Data Sheet
January 2000
File Number
1355.5
8A, 200V Ultrafast Diodes
MUR820 and RURP820 are ultrafast diodes with soft
recovery characteristics (t
rr
< 25ns). They have low forward
voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA09223.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
MUR820
RURP820
PACKAGE
TO-220AC
TO-220AC
BRAND
MUR820
RURP820
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
MUR820
RURP820
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 157
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
200
200
200
8
16
100
50
20
-65 to 175
UNITS
V
V
V
A
A
A
W
mJ
o
C
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©
Intersil Corporation 2000
MUR820, RURP820
Electrical Specifications
SYMBOL
V
F
I
F
= 8A
I
F
= 8A, T
C
= 150
o
C
I
R
V
R
= 200V
V
R
= 200V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
13
5
25
60
-
MAX
0.975
0.895
100
500
25
30
-
-
-
-
3
UNITS
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
40
100
I
R
, REVERSE CURRENT (µA)
175
o
C
I
F
, FORWARD CURRENT (A)
10
10
100
o
C
0.1
100
o
C
175
o
C
1
0.5
0
0.2
0.4
0.6
25
o
C
0.01
25
o
C
0.8
1
1.2
1.4
0.001
0
50
100
150
200
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
3-174
MUR820, RURP820
Typical Performance Curves
20
T
C
= 25
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
16
(Continued)
35
T
C
= 100
o
C, dI
F
/dt = 200A/µs
30
25
20
t
rr
t
rr
t
a
12
t
a
8
15
10
5
t
b
4
t
b
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
40
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
50
8
DC
6
SQ. WAVE
4
30
t
rr
t
a
20
2
10
t
b
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
0
140
145
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
150
C
J
, JUNCTION CAPACITANCE (pF)
125
100
75
50
25
0
0
50
100
150
V
R
, REVERSE VOLTAGE (V)
200
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3-175
MUR820, RURP820
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
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