= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
I
F
= 8A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
32
21
195
25
-
MAX
1.3
1.0
100
-
500
-
60
70
-
-
-
-
2
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
MUR860, RURP860
TYP
-
-
-
-
-
-
-
-
32
21
195
25
-
MAX
1.5
1.2
-
100
-
500
60
70
-
-
-
-
2
UNITS
V
V
µA
µA
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
40
500
I
R
, REVERSE CURRENT (µA)
100
175
o
C
100
o
C
I
F
, FORWARD CURRENT (A)
10
10
100
o
C
175
o
C
1
0.5
0
25
o
C
0.5
1
1.5
2
2.5
1
0.1
25
o
C
0.01
0
100
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
MUR840, MUR860, RURP840, RURP860
Typical Performance Curves
60
T
C
= 25
o
C, dI
F
/dt = 200A/µs
50
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
40
80
(Continued)
100
T
C
= 100
o
C, dI
F
/dt = 200A/µs
t
rr
60
t
rr
30
20
10
0
0.5
t
a
t
b
40
t
a
t
b
20
1
I
F
, FORWARD CURRENT (A)
4
8
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
125
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
100
8
DC
6
SQ. WAVE
4
t
rr
75
50
t
a
t
b
2
25
0
0.5
0
140
145
150
155
160
165
170
175
1
I
F
, FORWARD CURRENT (A)
4
8
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
100
C
J
, JUNCTION CAPACITANCE (pF)
80
60
40
20
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
MUR840, MUR860, RURP840, RURP860
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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