RURU10060
Data Sheet
January 2000
File Number
3546.3
100A, 600V Ultrafast Diode
The RURU10060 is an ultrafast diode with soft recovery
characteristics (t
rr
< 80ns). It has low forward voltage drop
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristic
minimizes ringing and electrical noise in many power
switching circuits reducing power loss in the switching
transistors.
Formerly development type TA49019.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <80ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURU10060
PACKAGE
TO-218
BRAND
RURU10060
Packaging
JEDEC STYLE SINGLE LEAD TO-218
NOTE: When ordering, use the entire part number.
ANODE
Symbol
K
CATHODE
(FLANGE)
A
Absolute Maximum Ratings
T
C
= 25
o
C
RURU10060
UNITS
V
V
V
A
600
600
600
100
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 70
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
200
A
1000
A
210
50
-65 to 175
W
mJ
o
C
1
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Copyright
©
Intersil Corporation 2000
RURU10060
Electrical Specifications
SYMBOL
V
F
I
F
= 100A
I
F
= 100A, T
C
= 150
o
C
I
R
V
R
= 600V
V
R
= 600V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 100A/µs
I
F
= 100A, dI
F
/dt = 100A/µs
t
a
t
b
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 100A, dI
F
/dt = 100A/µs
I
F
= 100A, dI
F
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
45
25
-
MAX
1.6
1.4
250
2.0
80
100
-
-
0.71
UNITS
V
V
µA
mA
ns
ns
ns
ns
o
C/W
Typical Performance Curves
500
I
R
, REVERSE CURRENT
(µA)
1000
175
o
C
I
F
, FORWARD CURRENT (A)
100
100
o
C
100
175
o
C
10
25
o
C
10
1
100
o
C
0.1
25
o
C
0.01
0
100
200
300
400
500
600
1
0
0.5
1
1.5
2
2.5
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURU10060
Typical Performance Curves
100
T
C
= 25
o
C, dI
F
/dt = 100A/µs
t, RECOVERY TIMES (ns)
80
(Continued)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
100
80
DC
60
t
rr
60
SQ. WAVE
40
t
a
t
b
40
20
20
0
1
10
I
F
, FORWARD CURRENT (A)
100
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 5. t
rr
TEST CIRCUIT
I = 1.6A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
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